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1. (WO2019026606) IMAGING DEVICE
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Pub. No.: WO/2019/026606 International Application No.: PCT/JP2018/026711
Publication Date: 07.02.2019 International Filing Date: 17.07.2018
IPC:
H04N 5/369 (2011.01) ,G01S 7/481 (2006.01) ,G01S 17/89 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/10 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7
Details of systems according to groups G01S13/, G01S15/, G01S17/127
48
of systems according to group G01S17/58
481
Constructional features, e.g. arrangements of optical elements
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17
Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88
Lidar systems, specially adapted for specific applications
89
for mapping or imaging
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
スタンレー電気株式会社 STANLEY ELECTRIC CO., LTD. [JP/JP]; 東京都目黒区中目黒2丁目9番13号 2-9-13, Nakameguro, Meguro-ku, Tokyo 1538636, JP
Inventors:
中澤 克紀 NAKAZAWA, Katsunori; JP
後藤 浩成 GOTO, Hiroshige; JP
Agent:
特許業務法人創成国際特許事務所 SATO & ASSOCIATES; 東京都新宿区西新宿6-24-1 西新宿三井ビルディング 18階 Nishi-Shinjuku Mitsui Building 18F, 24-1, Nishi-Shinjuku 6-chome, Shinjuku-ku, Tokyo 1600023, JP
Priority Data:
2017-14940201.08.2017JP
Title (EN) IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE
(JA) 撮像装置
Abstract:
(EN) An imaging element 400 comprises a p-epi 112, a surface-side n-type semiconductor region 117 separated from an adjacent PD by a channel stopper 115, and a surface-side p+ region 123. Voltages different from each other are applied to the channel stopper 115 or the p+ region 123 and the p-epi 112. The voltages generate an accelerating electric field that accelerates electrons generated in the p-epi 112 by a photoelectric effect to the n-type semiconductor region 11.
(FR) L'invention concerne un élément d'imagerie (400) comprenant une épitaxie P- (112), une région en semi-conducteur de type N (117) côté surface séparée d'un PD adjacent par un dispositif d'arrêt de canal (115), et une région P+ (123) côté surface. Des tensions mutuellement différentes sont appliquées au dispositif d'arrêt de canal (115) ou à la région P+ (123) et à l'épitaxie P- (112). Les tensions génèrent un champ électrique d'accélération qui accélère les électrons générés dans l'épitaxie P- (112) par un effet photoélectrique sur la région en semi-conducteur de type N (117).
(JA) 撮像素子400は、p-epi112と、チャンネルストッパ115により隣接のPDから分離された表面側のn型半導体領域117と、さらに表面側のp+領域123とを有する。チャンネルストッパ115又はp+領域123とp-epi112とに相互に異なる電圧が印加される。該電圧は、光電効果によりp-epi112に生成される電子をn型半導体領域11に加速する加速電界を生成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)