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1. (WO2019026522) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
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Pub. No.: WO/2019/026522 International Application No.: PCT/JP2018/025482
Publication Date: 07.02.2019 International Filing Date: 05.07.2018
IPC:
G03F 7/004 (2006.01) ,C08F 20/10 (2006.01) ,C08F 20/22 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/11 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
22
Esters containing halogen
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
西尾 亮 NISHIO Ryo; JP
▲高▼田 暁 TAKADA Akira; JP
後藤 研由 GOTO Akiyoshi; JP
丹呉 直紘 TANGO Naohiro; JP
丸茂 和博 MARUMO Kazuhiro; JP
王 惠瑜 O Keiyu; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-14757031.07.2017JP
Title (EN) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTIVE OU SENSIBLE AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIFS ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract:
(EN) Provided are: an active light sensitive or radiation sensitive resin composition which exhibits excellent DOF and is capable of forming a resist film that has excellent water followability; a resist film; a pattern forming method; and a method for producing an electronic device. This active light sensitive or radiation sensitive resin composition contains a resin, the solubility of which in an aqueous alkaline solution increases by the action of an acid, a compound which produces an acid when irradiated with active light or radiation, an ester compound and a fluorine-containing polymer; and the ester compound exhibits alkali degradability, while having a molecular weight of 50 or more but less than 1,500.
(FR) L'invention concerne : une composition de résine sensible à la lumière active ou sensible au rayonnement qui manifeste un excellent DOF et qui est à même de former un film de réserve présentant une excellente aptitude au suivi en milieu aqueux ; un film de réserve ; un procédé de formation de motif ; et un procédé de production d'un dispositif électronique. Cette composition de résine sensible à la lumière active ou sensible au rayonnement contient une résine dont la solubilité dans une solution alcaline aqueuse augmente sous l'action d'un acide, un composé qui produit un acide lorsqu'il est irradié par une lumière active ou par un rayonnement, un composé ester et un polymère contenant du fluor ; et le composé ester présente une dégradabilité alcaline, tout en ayant une masse moléculaire supérieure ou égale à 50 mais inférieure à 1 500.
(JA) 優れた水追従性を有するレジスト膜を形成でき、優れたDOFを示す感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法を提供する。感活性光線性又は感放射線性樹脂組成物は、酸の作用によりアルカリ水溶液に対する溶解度が増大する樹脂、活性光線又は放射線の照射により酸を発生する化合物、エステル化合物、及び、含フッ素ポリマーを含み、エステル化合物が、アルカリ分解性を有し、かつ、分子量が50以上1500未満である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)