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1. (WO2019026478) COMPOSITION FOR TREATING SEMICONDUCTOR AND TREATMENT METHOD
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Pub. No.: WO/2019/026478 International Application No.: PCT/JP2018/024333
Publication Date: 07.02.2019 International Filing Date: 27.06.2018
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
JSR株式会社 JSR CORPORATION [JP/JP]; 東京都港区東新橋一丁目9番2号 9-2, Higashi-shinbashi 1-chome, Minato-ku, Tokyo 1058640, JP
Inventors:
横井 勝孝 YOKOI, Katsutaka; JP
山本 賢一 YAMAMOTO, Ken-ichi; JP
三星 蘭 MITSUBOSHI, Ran; JP
増田 奏衣 MASUDA, Kanae; JP
加茂 理 KAMO, Satoshi; JP
篠田 智隆 SHINODA, Tomotaka; JP
Agent:
大渕 美千栄 OFUCHI, Michie; JP
布施 行夫 FUSE, Yukio; JP
松本 充史 MATSUMOTO, Mitsufumi; JP
Priority Data:
2017-15056003.08.2017JP
Title (EN) COMPOSITION FOR TREATING SEMICONDUCTOR AND TREATMENT METHOD
(FR) COMPOSITION POUR TRAITER UN SEMI-CONDUCTEUR ET PROCÉDÉ DE TRAITEMENT
(JA) 半導体処理用組成物および処理方法
Abstract:
(EN) Provided are: a composition for treating a semiconductor, the composition being capable of suppressing damage by corrosion on tungsten-containing wires or the like of an object to be treated and efficiently removing contamination from the surface of the object to be treated; and a treatment method using the composition. The treatment method according to the present invention comprises a step for chemically-mechanically polishing a wiring substrate containing tungsten as a wiring material, by using a composition containing an iron ion and a peroxide, and thereafter treating the wiring substrate with a composition for treating a semiconductor, wherein the composition for treating a semiconductor comprises a compound (A) having two or more groups selected from the group consisting of tertiary amino groups and salts thereof and a water-soluble compound (B) having a solubility parameter of 10 or higher, and has a pH of 2-7.
(FR) L'invention concerne : une composition pour traiter un semi-conducteur, la composition étant apte à supprimer un endommagement par corrosion sur des fils contenant du tungstène ou similaire d'un objet à traiter et éliminant efficacement la contamination de la surface de l'objet à traiter; et un procédé de traitement utilisant la composition. Le procédé de traitement selon la présente invention comprend une étape de polissage chimico-mécanique d'un substrat de câblage contenant du tungstène en tant que matériau de câblage, en utilisant une composition contenant un ion fer et un peroxyde, et ensuite le traitement du substrat de câblage avec une composition pour le traitement d'un semi-conducteur, la composition pour le traitement d'un semi-conducteur comprenant un composé (A) ayant deux ou plusieurs groupes choisis dans le groupe constitué par des groupes amino tertiaires et des sels de ceux-ci et un composé soluble dans l'eau (B) ayant un paramètre de solubilité de 10 au minimum, et ayant un pH de 2 à 7.
(JA) 被処理体のタングステンを含む配線等に及ぼす腐食によるダメージを抑制し、被処理体の表面より汚染を効率的に除去できる半導体処理用組成物、およびそれを用いた処理方法を提供する。 本発明に係る処理方法は、配線材料としてタングステンを含む配線基板を、鉄イオンおよび過酸化物を含有する組成物を用いて化学機械研磨した後に、三級アミノ基およびその塩からなる群から選択される少なくとも1種の基を2個以上有する化合物(A)と、溶解パラメータが10以上の水溶性化合物(B)とを含有し、pHが2~7である半導体処理用組成物を用いて処理する工程を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)