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1. (WO2019026440) TRANSISTOR AND ELECTRONIC APPARATUS
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Pub. No.: WO/2019/026440 International Application No.: PCT/JP2018/022960
Publication Date: 07.02.2019 International Filing Date: 15.06.2018
IPC:
H01L 21/336 (2006.01) ,H01L 21/822 (2006.01) ,H01L 27/04 (2006.01) ,H01L 27/06 (2006.01) ,H01L 27/088 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
深作 克彦 FUKASAKU, Katsuhiko; JP
Agent:
亀谷 美明 KAMEYA, Yoshiaki; JP
金本 哲男 KANEMOTO, Tetsuo; JP
萩原 康司 HAGIWARA, Yasushi; JP
松本 一騎 MATSUMOTO, Kazunori; JP
Priority Data:
2017-14909701.08.2017JP
Title (EN) TRANSISTOR AND ELECTRONIC APPARATUS
(FR) TRANSISTOR ET APPAREIL ÉLECTRONIQUE
(JA) トランジスタ及び電子機器
Abstract:
(EN) [Problem] To provide an electronic apparatus and a transistor, the characteristics of which are easily controlled. [Solution] A transistor comprising: a semiconductor substrate including conductive impurities; an element separation layer disposed from the surface towards the inner side of the semiconductor substrate, and defining an element region; a buried insulating layer disposed in the semiconductor substrate in the element region; a gate electrode disposed on the semiconductor substrate via a gate insulating film so as to cross the element region; and a drain region and a source region that are respectively disposed in opposing regions across the gate electrode in the element region, wherein the concentration or the polarity of the conductive impurities in the semiconductor substrate in an edge region at least including the edge of the gate electrode on the drain region side is different from the concentration or the polarity of the conductive impurities in the semiconductor substrate in a central region including the central portion of the gate electrode.
(FR) Le problème décrit par la présente invention est de fournir un appareil électronique et un transistor dont les caractéristiques sont facilement commandées. À cet effet, l'invention concerne un transistor comprenant : un substrat semi-conducteur comprenant des impuretés conductrices ; une couche de séparation d'élément disposée à partir de la surface vers le côté interne du substrat semi-conducteur, et délimitant une région d'élément ; une couche isolante enfouie disposée dans le substrat semi-conducteur dans la région d'élément ; une électrode de grille disposée sur le substrat semi-conducteur par l'intermédiaire d'un film d'isolation de grille de manière à croiser la région d'élément ; et une région de drain et une région de source qui sont respectivement disposées dans des régions opposées à travers l'électrode de grille dans la région d'élément, la concentration ou la polarité des impuretés conductrices dans le substrat semi-conducteur dans une région de bord comprenant au moins le bord de l'électrode de grille sur le côté de la région de drain étant différente de la concentration ou de la polarité des impuretés conductrices dans le substrat semi-conducteur dans une région centrale comprenant la partie centrale de l'électrode de grille.
(JA) 【課題】特性の制御が容易なトランジスタ及び電子機器を提供する。 【解決手段】導電型不純物を含む半導体基板と、前記半導体基板の表面から内部に向かって設けられ、素子領域を画定する素子分離層と、前記素子領域の前記半導体基板の内部に設けられた埋込絶縁層と、前記素子領域を横断して、前記半導体基板の上にゲート絶縁膜を介して設けられたゲート電極と、前記素子領域の前記ゲート電極を挟んで対向する領域に設けられたドレイン領域及びソース領域と、を備え、前記ゲート電極の前記ドレイン領域側の端部を少なくとも含む端部領域における前記半導体基板の前記導電型不純物の濃度又は極性は、前記ゲート電極の中央部を含む中央領域における前記半導体基板の前記導電型不純物の濃度又は極性と異なる、トランジスタ。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)