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1. (WO2019025896) THREE TERMINAL SPIN HALL MRAM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/025896 International Application No.: PCT/IB2018/055419
Publication Date: 07.02.2019 International Filing Date: 20.07.2018
IPC:
G11C 11/16 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU, GB (MG)
IBM (CHINA) INVESTMENT COMPANY LIMITED [CN/CN]; 25/F, Pangu Plaza No.27, Central North 4th Ring Road, Chaoyang District, Beijing 100101, CN (MG)
Inventors:
WORLEDGE, Daniel; US
DE BROSSE, John, Kenneth; US
SUN, Jonathan, Zanhong; US
Agent:
WILLIAMS, Julian; GB
Priority Data:
15/666,23601.08.2017US
Title (EN) THREE TERMINAL SPIN HALL MRAM
(FR) MRAM À EFFET HALL DE SPIN À TROIS TERMINAUX
Abstract:
(EN) Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.
(FR) L'invention concerne des conceptions MRAM à effet Hall de spin améliorées qui permettent l'écriture de tous les bits le long d'une ligne de mots donnée conjointement à l'aide d'un fil à effet Hall de spin séparé pour chaque MTJ. Selon un aspect, une cellule de mémoire magnétique comprend : un fil à effet Hall de spin exclusif à la cellule de mémoire magnétique ; une MTJ disposée sur le fil à effet Hall de spin, la MTJ comprenant une couche magnétique fixe séparée d'une couche magnétique libre par une barrière tunnel ; et une paire de transistors de sélection connectés aux extrémités opposées du fil à effet Hall de spin. L'invention concerne également un dispositif MRAM et son procédé de fonctionnement.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)