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1. (WO2019025354) METHOD FOR IMPROVED MANUFACTURING OF A PHOTODIODE-BASED OPTICAL SENSOR AND ASSOCIATED DEVICE
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Pub. No.: WO/2019/025354 International Application No.: PCT/EP2018/070570
Publication Date: 07.02.2019 International Filing Date: 30.07.2018
IPC:
H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
THALES [FR/FR]; TOUR CARPE DIEM Place des Corolles Esplanade Nord 92400 COURBEVOIE, FR
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc - Bâtiment "Le Ponant D" 75015 PARIS, FR
Inventors:
LE GOFF, Florian; FR
REVERCHON, Jean-Luc; FR
Agent:
PRIORI, Enrico; FR
ESSELIN, Sophie; FR
Priority Data:
170082403.08.2017FR
Title (EN) METHOD FOR IMPROVED MANUFACTURING OF A PHOTODIODE-BASED OPTICAL SENSOR AND ASSOCIATED DEVICE
(FR) PROCEDE DE FABRICATION AMELIORE D'UN DETECTEUR OPTIQUE A BASE DE PHOTODIODES ET DISPOSITIF ASSOCIE
Abstract:
(EN) The invention relates to a method for manufacturing (700) a hybrid-type optical sensor comprising the steps of: - assembling (100) by means of an assembly layer (11) firstly an absorbent structure (Sabs) and secondly a reading circuit (ROIC), - etching (200) locally through the absorbent structure, from the assembly layer and the reading circuit to the contacts, so as to form electrical interconnection holes (IH), - depositing (300) a protective layer (PL, PLsca, PLd, PLscna, PLscO) on the walls of the interconnection holes, - producing (400) a doped zone (DZ) of a second type of doping different from the first type of doping by means of diffusing a dopant (Dop) into the absorbent structure through the protective layer, the zone extending annularly around the interconnection holes (IH) so as to form a diode (PhD), - depositing (500) a metallisation layer (ML) on the walls of the interconnection holes (IH), making it possible to electrically connect the doped zone (DZ) to the contact (TLC).
(FR) L'invention concerne un procédé de fabrication (700) d'un détecteur optique de type hybride comprenant les étapes consistant à : -assembler (100) par une couche d'assemblage (11) d'une part une structure absorbante (Sabs) et d'autre part un circuit de lecture (ROIC), -graver (200) localement au travers de la structure absorbante, de la couche d'assemblage et du circuit de lecture jusqu'aux contacts, de manière à constituer des trous d'interconnexion (IH) électrique, -déposer (300) une couche de protection (PL, PLsca, PLd, PLscna, PLscO) sur les parois des trous d'interconnexion, -réaliser (400) une zone dopée (DZ) d'un deuxième type de dopage différent du premier type de dopage par diffusion d'un dopant (Dop) dans la structure absorbante au travers de ladite couche de protection, ladite zone s'étendant de manière annulaire autour desdits trous d'interconnexion (IH) de manière à constituer une diode (PhD), -déposer (500) une couche de métallisation (ML) sur les parois des trous d'interconnexion (IH) permettant de relier électriquement la zone dopée (DZ) avec le contact (TLC).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)