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1. (WO2019025197) SEMICONDUCTOR WAFER MADE OF MONOCRYSTALLINE SILICON AND METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/025197 International Application No.: PCT/EP2018/069584
Publication Date: 07.02.2019 International Filing Date: 19.07.2018
IPC:
H01L 21/02 (2006.01) ,C30B 15/02 (2006.01) ,C30B 15/04 (2006.01) ,C30B 15/20 (2006.01) ,H01L 21/322 (2006.01) ,C30B 33/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
04
adding doping materials, e.g. for np-junction
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322
to modify their internal properties, e.g. to produce internal imperfections
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02
Heat treatment
Applicants:
SILTRONIC AG [DE/DE]; Hanns-Seidel-Platz 4 81737 München, DE
Inventors:
SATTLER, Andreas; DE
VOLLKOPF, Alexander; DE
MANGELBERGER, Karl; AT
Agent:
STAUDACHER, Wolfgang; DE
Priority Data:
10 2017 213 587.504.08.2017DE
Title (EN) SEMICONDUCTOR WAFER MADE OF MONOCRYSTALLINE SILICON AND METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER
(FR) PLAQUETTE DE SEMI-CONDUCTEUR EN SILICIUM MONOCRISTALLIN ET PROCÉDÉ DE FABRICATION DE LA PLAQUETTE DE SEMI-CONDUCTEUR
(DE) HALBLEITERSCHEIBE AUS EINKRISTALLINEM SILIZIUM UND VERFAHREN ZUR HERSTELLUNG DER HALBLEITERSCHEIBE
Abstract:
(EN) The invention relates to an epitaxially coated semiconductor wafer made of monocrystalline silicon and to a method for producing a p/p+ epitaxially coated semiconductor wafer. The epitaxially coated semiconductor wafer made of monocrystalline silicon comprises: a p+-doped substrate layer; a p-doped epitaxial layer made of monocrystalline silicon, which covers a top side surface of the substrate layer; an oxygen concentration of the substrate layer of no less than 5.3 x 1017 atoms/cm3 and no more than 6.0 x 1017 atoms/cm3; a resistivity of the substrate layer of no less than 5 mΩcm and no more than 10 mΩcm; and the potential of the substrate layer, following heat treatment of the epitaxially coated semiconductor wafer, to form BMDs, the BMD density having certain properties.
(FR) L’invention concerne une plaquette de semi-conducteur, revêtue par épitaxie, en silicium monocristallin et un procédé de fabrication d’une plaquette de semi-conducteur revêtue par épitaxie p/p+. La plaquette de semi-conducteur, revêtue par épitaxie, en silicium monocristallin comprend une plaquette de substrat dopée p ; une couche épitaxiale dopée p en silicium monocristallin qui recouvre une surface latérale supérieure de la plaquette de substrat ; et a une concentration en oxygène de la plaquette de substrat d’au moins 5,3 x 10 17 atomes/cm3 et d’au plus 6,0 x 10 17 atomes/cm3; une résistivité de la plaquette de substrat d’au moins 5 mΩcm et d’au plus 10 mΩcm ; et le potentiel de la plaquette de substrat à former des BMD à la suite d’un traitement thermique de la plaquette de semi-conducteur revêtue par épitaxie, la densité de BMD ayant des propriétés déterminées.
(DE) Epitaktisch beschichtete Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer p/p+ epitaktisch beschichteten Halbleiterscheibe. Die epitaktisch beschichtete Halbleiterscheibe aus einkristallinem Silizium umfasst eine p+-dotierte Substratscheibe; eine p-dotierte epitaktische Schicht aus einkristallinem Silizium, die eine obere Seitenfläche der Substratscheibe bedeckt; eine Sauerstoff-Konzentration der Substratscheibe von nicht weniger als 5,3 x 1017 Atome/cm3 und nicht mehr als 6,0 x 1017 Atome/cm3; eine Resistivität der Substratscheibe von nicht weniger als 5 mΩcm und nicht mehr als 10 mΩcm; und das Potenzial der Substratscheibe in Folge einer Wärmebehandlung der epitaktisch beschichteten Halbleiterscheibe BMDs auszubilden, wobei die Dichte an BMDs bestimmte Eigenschaften aufweist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)