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1. (WO2019025157) OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
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Pub. No.: WO/2019/025157 International Application No.: PCT/EP2018/069007
Publication Date: 07.02.2019 International Filing Date: 12.07.2018
IPC:
H01L 33/54 (2010.01) ,H01L 33/56 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
SCHWALENBERG, Simon; DE
LEISEN, Daniel; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 117 651.903.08.2017DE
Title (EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) COMPOSANT OPTOÉLECTRONIQUE À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT OPTOÉLECTRONIQUE À SEMI-CONDUCTEUR
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS
Abstract:
(EN) The invention relates to an optoelectronic semiconductor component (10) comprising: - at least one semiconductor chip (11) for generating electromagnetic radiation, and - a housing body (12) in which the semiconductor chip (11) is arranged and which is filled with a radiation-permeable potting (13), wherein - the potting (13) completely covers the semiconductor chip (11), - scattering particles (14) are introduced into the potting (13), - some of the scattering particles (14) on a potting (13) side facing away from the semiconductor chip (11) are free of potting (13) at least in some locations, and - the ratio of the refractive index of the potting (13) to the refractive index of the scattering particles (14) is at least 0.95 and maximally 1.05. The invention additionally relates to a method for producing an optoelectronic semiconductor component (10).
(FR) L'invention concerne un composant optoélectronique à semi-conducteur (10) comprenant : - au moins une puce semi-conductrice (11) destinée à produire un rayonnement électromagnétique, - un corps de boîtier (12), dans lequel la puce semi-conductrice (11) est agencée et qui est rempli d'un scellement (13) laissant passer un rayonnement, - le scellement (13) recouvrant entièrement la puce semi-conductrice (11), - des particules de diffusion (14) étant introduites dans le scellement (13), - certaines des particules de diffusion (14) sur une face du scellement (13) opposée à la puce semi-conductrice (11) étant au moins par endroits dégagées du scellement (13), et - le rapport de l'indice de réfraction du scellement (13) sur l'indice de réfraction des particules de diffusion (14) atteignant au minimum 0,95 et au maximum 1,05. L'invention concerne en outre un procédé de fabrication d'un composant optoélectronique (10) à semi-conducteur.
(DE) Es wird ein optoelektronisches Halbleiterbauelement (10) angegeben mit: - mindestens einem Halbleiterchip (11) zur Erzeugung von elektromagnetischer Strahlung, - einem Gehäusekörper (12), in dem der Halbleiterchip (11) angeordnet ist und der mit einem strahlungsdurchlässigen Verguss (13) befüllt ist, wobei - der Verguss (13) den Halbleiterchip (11) vollständig bedeckt, - Streupartikel (14) in den Verguss (13) eingebracht sind, - manche der Streupartikel (14) an einer dem Halbleiterchip (11) abgewandten Seite des Verguss (13) zumindest stellenweise frei vom Verguss (13) sind, und - das Verhältnis des Brechungsindex vom Verguss (13) zum Brechungsindex der Streupartikel (14) mindestens 0,95 und höchstens 1,05 beträgt. Außerdem wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements (10) angegeben.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)