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1. (WO2019024892) PHOTORESIST STRIPPING SOLUTION AND METHOD OF STRIPPING PHOTORESIST
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Pub. No.: WO/2019/024892 International Application No.: PCT/CN2018/098332
Publication Date: 07.02.2019 International Filing Date: 02.08.2018
IPC:
G03F 7/42 (2006.01) ,H01L 21/312 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
42
Stripping or agents therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312
Organic layers, e.g. photoresist
Applicants:
无锡华瑛微电子技术有限公司 HUAYING RESEARCH CO., LTD [CN/CN]; 中国江苏省无锡市 新区震泽路18号鲸鱼座A栋1楼 1f Cetus Building, Section A Wuxi National Sensor Information Center, 18 Zhenze Road Wuxi, Jiangsu 214135, CN
Inventors:
温子瑛 WEN, Sophia Z.; CN
孙富成 SUN, Fucheng; CN
王致凯 WANG, Zhikai; CN
Agent:
苏州市新苏专利事务所有限公司 NEW SUZHOU PATENT AGENT CO., LTD; 中国江苏省苏州市 翠庭路200号11幢2楼 FL.2, Building 11, No. 200, CuiTing Road Suzhou, Jiangsu 215000, CN
Priority Data:
201710657370.603.08.2017CN
201710969167.218.10.2017CN
Title (EN) PHOTORESIST STRIPPING SOLUTION AND METHOD OF STRIPPING PHOTORESIST
(FR) SOLUTION DE DÉCAPAGE DE PHOTORÉSINE ET PROCÉDÉ DE DÉCAPAGE DE PHOTORÉSINE
(ZH) 一种光刻胶的去除液及光刻胶的去除方法
Abstract:
(EN) Disclosed are a photoresist stripping solution comprising an N-containing compound and an organic matter, the mass ratio of the N-containing compound and the organic matter being 1:(0.5-150). The N-containing compound comprises at least one of the following substances: tetraalkyl-substituted ammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water, wherein the tetraalkyl-substituted ammonium hydroxide is represented by formula (I): R1, R2, R3, and R4 in formula (I) are alkyl groups having 1 to 4 carbons respectively, and the organic matter is an organic matter comprising at least one functional group having electron-withdrawing property. By mixing a specific type of N-containing compound and a specific type of organic matter in a certain proportion, and preferably adding a certain amount of water, the photoresist stripping solution according to the present application has an excellent stripping effect.
(FR) L'invention concerne une solution de décapage de photorésine comprenant un composé contenant du N et une matière organique, le rapport de masse du composé contenant du N et de la matière organique étant de 1:(0,5-150). Le composé contenant du N comprend au moins l'une des substances suivantes : un hydroxyde d'ammonium substitué par un tétraalkyle, de l'ammoniac, de l'ammoniac liquide et un mélange d'ammoniac et d'eau, l'hydroxyde d'ammonium substitué par un tétraalkyle étant représenté par la formule (I) : dans la formule (I), R1, R2, R3 et R4 sont des groupes alkyle ayant respectivement 1 à 4 atomes de carbone, et la matière organique est une matière organique comprenant au moins un groupe fonctionnel ayant une propriété électroattractrice. En mélangeant un type spécifique de composé contenant du N et un type spécifique de matière organique dans une certaine proportion, et de préférence en ajoutant une certaine quantité d'eau, la solution de décapage de photorésine telle que conçue par la présente invention présente un excellent effet de décapage.
(ZH) 本发明公开了一种光刻胶的去除液,包括含N化合物和有机物,二者的质量比为1:(0.5-150);所述含N化合物包括以下物质中的至少一种:四烷基取代的氢氧化铵、氨气、液氨以及氨与水的混合物;其中,四烷基取代的氢氧化铵的通式如式(I)所示:(I) 式中,R1、R2、R3、R4分别为1-4个碳的烷基;所述有机物为至少具有一个吸电子官能团的有机物。本发明将特定种类的含N化合物和特定种类的有机物按一定比例进行混合,优选再添加一定量的水,则使得本申请中的去除液具有极其优异的去胶效果。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)