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1. (WO2019024847) SEMICONDUCTOR TESTING METHOD AND TESTING DEVICE
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Pub. No.: WO/2019/024847 International Application No.: PCT/CN2018/097808
Publication Date: 07.02.2019 International Filing Date: 31.07.2018
IPC:
H01L 21/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
惠科股份有限公司 HKC CORPORATION LIMITED [CN/CN]; 中国广东省深圳市 宝安区石岩街道水田村民营工业园惠科工业园厂房1、2、3栋,九州阳光1号厂房5、7楼 5th and 7th Floor of Factory Building 1, Jiuzhou Yangguang Factory Buildings 1, 2, 3 of HKC Industrial Park, Privately Operated Industrial Park, Shuitian Village, Shiyan Sub-district, Baoan District Shenzhen, Guangdong 518000, CN
重庆惠科金渝光电科技有限公司 CHONGQING HKC OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国重庆市 巴南区界石镇石景路1号 No.1 Shijing Rd. Jieshi, Banan District Chongqing 401320, CN
Inventors:
卓恩宗 CHO, En-Tsung; CN
樊堃 FAN, Kun; CN
Agent:
深圳市翼智博知识产权事务所(普通合伙) SHENZHEN EASYPRO INTELLECTUAL PROPERTY OFFICE (GENERAL PARTNERSHIP); 中国广东省深圳市 福田区车公庙泰然九路皇冠科技园2栋3楼3A05 Room 3A05, 3rd Floor, Building 2 Huangguan Science and Technology Park, Tairan 9th Road, Chegongmiao, Futian District Shenzhen, Guangdong 518040, CN
Priority Data:
201710644520.X01.08.2017CN
Title (EN) SEMICONDUCTOR TESTING METHOD AND TESTING DEVICE
(FR) PROCÉDÉ D'ESSAI DE SEMI-CONDUCTEUR, ET DISPOSITIF D'ESSAI
(ZH) 一种半导体的测试方法和测试装置
Abstract:
(EN) Disclosed by the embodiments of the present application are a semiconductor testing method and testing device; the testing method comprises the steps of: exciting a test sample by means of a pulse laser to generate a photoconductive effect; detecting weak information of the photoconductive effect; obtaining a composite lifetime of unbalanced carriers of the test sample by means of analyzing the photoconductive effect and the weak information. The testing device comprises: a pulse laser emitter, a microwave generator, a microwave receiver, and a calculation unit.
(FR) Les modes de réalisation de la présente invention concernent un procédé d'essai de semi-conducteur et un dispositif d'essai, le procédé d'essai comprenant les étapes consistant : à exciter un échantillon pour essai à l'aide d'un laser à impulsions de manière à produire un effet photoconducteur ; à détecter des informations faibles de l'effet photoconducteur ; à obtenir une durée de vie composite de porteuses non équilibrées de l'échantillon pour essai au moyen de l'analyse de l'effet photoconducteur et des informations faibles. Le dispositif d'essai comprend : un émetteur laser à impulsions, un générateur de micro-ondes, un récepteur de micro-ondes et une unité de calcul.
(ZH) 本申请实施例公开了一种半导体的测试方法和测试装置,该测试方法包括步骤:通过脉冲激光激发测试样品,产生光电导效应;探测光电导效应的衰弱信息;通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。该测试装置包括:脉冲激光发射器,微波发生器,微波接收器,计算单元。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)