Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019024773) PHOTODETECTION FILM, PHOTODETECTION SENSOR AND PHOTODETECTION DISPLAY APPARATUS INCLUDING THE PHOTODETECTION FILM, AND METHOD OF MAKING THE PHOTODETECTION FILM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/024773 International Application No.: PCT/CN2018/097356
Publication Date: 07.02.2019 International Filing Date: 27.07.2018
IPC:
H01L 31/113 (2006.01) ,H01L 31/112 (2006.01) ,H01L 31/0224 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
112
characterised by field-effect operation, e.g. junction field-effect photo- transistor
113
being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
112
characterised by field-effect operation, e.g. junction field-effect photo- transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
Applicants:
SHANGHAI HARVEST INTELLIGENCE TECHNOLOGY CO., LTD. [CN/CN]; Room J2990, Building 2, No.4268 Zhennan Road, Jiading District Shanghai 201800, CN
Inventors:
HUANG, Jiandong; CN
Agent:
TIE CHI PATENT FIRM; Rm. 705, 7F, Jialong International Tower No. 19, Chaoyang Park Road, Chaoyang Dist. Beijing 100026, CN
Priority Data:
201710640248.831.07.2017CN
Title (EN) PHOTODETECTION FILM, PHOTODETECTION SENSOR AND PHOTODETECTION DISPLAY APPARATUS INCLUDING THE PHOTODETECTION FILM, AND METHOD OF MAKING THE PHOTODETECTION FILM
(FR) FILM DE PHOTODÉTECTION, CAPTEUR DE PHOTODÉTECTION ET APPAREIL D'AFFICHAGE DE PHOTODÉTECTION COMPRENANT LE FILM DE PHOTODÉTECTION, ET PROCÉDÉ DE FABRICATION DU FILM DE PHOTODÉTECTION
Abstract:
(EN) A photodetection film includes a photodetection transistor. The photodetection transistor includes a gate electrode, a gate insulating layer surroundingly formed on the gate electrode, at least one drain terminal disposed on the gate insulating layer and is spaced apart from the gate electrode, at least one source terminal disposed on the gate insulating layer and is spaced apart from the gate electrode and the at least one drain terminal, and a light-absorbing semiconductor layer disposed on the gate insulating layer and extends between the drain and source terminals. A photodetection sensor, a photodetection display apparatus, and a method of making the photodetection film are also disclosed.
(FR) La présente invention concerne un film de photodétection qui comprend un transistor de photodétection. Le transistor de photodétection comprend une électrode de grille, une couche d'isolation de grille formée de manière à entourer l'électrode de grille, au moins une borne de drain disposée sur la couche d'isolation de grille et espacée de l'électrode de grille, au moins une borne de source disposée sur la couche d'isolation de grille et espacée de l'électrode de grille et de ladite borne de drain, et une couche semi-conductrice d'absorption de lumière disposée sur la couche d'isolation de grille et s'étendant entre les bornes de drain et de source. L'invention concerne également un capteur de photodétection, un appareil d'affichage de photodétection, et un procédé de fabrication du film de photodétection.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)