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1. (WO2019024526) LIGHT EMITTING DIODE
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Pub. No.: WO/2019/024526 International Application No.: PCT/CN2018/081677
Publication Date: 07.02.2019 International Filing Date: 03.04.2018
IPC:
H01L 33/04 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/10 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
Applicants:
厦门三安光电有限公司 XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国福建省厦门市 同安区洪塘镇民安大道841-899号 NO.841-899, Min An Road, Hongtang Town, Tongan District Xiamen, Fujian 361100, CN
Inventors:
刘超 LIU, Chao; CN
宁振动 NING, Zhendong; CN
王凌飞 WANG, Lingfei; CN
张军召 ZHANG, Junzhao; CN
李维环 LI, Weihuan; CN
高文浩 GAO, Wenhao; CN
吴超瑜 WU, Chaoyu; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201710647048.501.08.2017CN
Title (EN) LIGHT EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE
(ZH) 发光二极管
Abstract:
(EN) Disclosed is a light emitting diode, capable of increasing forward effective light output and/or reflecting oblique incident light with the maximum effect by means of a combined DBR structure. According to one embodiment of the present invention, the light emitting diode comprises a light emitting epitaxial laminated layer having opposite first and second surfaces and comprising an N type limiting layer, an active layer, and a P type limiting layer. The first surface is a light exiting surface; the lower surface of the epitaxial laminated layer is configured to be in a combined DBR structure combined by N groups of DBR sub-layers; counting from the first pair of DBR sub-layers adjacent to the active layer among the N groups of DBR sub-layers, a central reflection wavelength of each group of DBR sub-layers is separately λ, λ+λ0, λ+2λ0, , λ+(N-1)*λ0, λ being a light emitting wavelength of the active layer, (N-1)*λ0 being the maximum blue shift generated by oblique incidence of the active layer, and λ0 being greater than 0.
(FR) L'invention concerne une diode électroluminescente pouvant augmenter la sortie de lumière effective vers l'avant et/ou réfléchir la lumière incidente oblique avec un effet maximum au moyen d'une structure DBR combinée. Selon un mode de réalisation de la présente invention, la diode électroluminescente comprend une couche stratifiée épitaxiale électroluminescente ayant des première et seconde surfaces opposées et comprenant une couche de limitation de type N, une couche active et une couche de limitation de type P. La première surface est une surface de sortie de lumière ; la surface inférieure de la couche stratifiée épitaxiale est conçue pour être dans une structure DBR combinée combinée par N groupes de sous-couches DBR ; en comptant à partir de la première paire de sous-couches DBR se trouvant à proximité de la couche active parmi les N groupes de sous-couches DBR, une longueur d'onde de réflexion centrale de chaque groupe de sous-couches DBR est séparément λ, λ+λ0, λ+2λ0, λ+(N-1)*λ0, λ étant une longueur d'onde d'émission de lumière de la couche active, (N-1)*λ0 étant le décalage maximal vers le bleu généré par l'incidence oblique de la couche active, et λ0 étant supérieur à 0.
(ZH) 本发明公开了一种发光二极管，其可增加正向有效的光输出和/或通过组合式DBR结构将斜入射光最大效果反射。根据本发明的一个实施例，发光二极管，包括发光外延叠层，其具有相对的第一表面和第二表面，包含N型限制层、有源层和P型限制层，其中第一表面为出光面，所述外延叠层的下表面设为组合式DBR结构，其由N组DBR子层组合成，所述N组DBR子层从邻近有源层的第一对DBR子层起算，每组DBR子层的中心反射波长为分别为λ，λ+λ0，λ+2λ0……λ+(N-1)*λ0，其中λ为所述有源层的发光波长，(N-1)*λ0为有源层斜入射产生的最大蓝移量，λ0＞0。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)