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1. (WO2019024525) LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2019/024525 International Application No.: PCT/CN2018/081674
Publication Date: 07.02.2019 International Filing Date: 03.04.2018
IPC:
H01L 33/00 (2010.01) ,H01L 33/04 (2010.01) ,H01L 33/14 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Applicants:
厦门三安光电有限公司 XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国福建省厦门市 同安区洪塘镇民安大道841-899号 NO. 841-899, Min An Road, Hongtang Town, Tongan District Xiamen, Fujian 361100, CN
Inventors:
李森林 LI, Senlin; CN
毕京锋 BI, Jingfeng; CN
黄俊凯 HUANG, Chun Kai; CN
王进 WANG, Jin; CN
连恺熙 LIEN, Shih-Yi; CN
吴俊毅 WU, Chun-Yi; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201710637778.731.07.2017CN
Title (EN) LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 发光二极管及其制备方法
Abstract:
(EN) A light emitting diode structure and a preparation method therefor. By using MOCVD or MBE, a tensile stress quantum dot structure is grown between a p-type limiting layer (107) and a GaP current expansion layer (109) of a light emitting diode by means of metal droplet epitaxy. Such a structure can effectively reduce the interface non-radiative recombination between the p-type limiting layer (107) and the GaP current expansion layer (109), improve the crystalline quality of a window layer, and improve the performance of the light emitting diode.
(FR) La présente invention concerne une structure de diode électroluminescente et son procédé de préparation. Au moyen d'un MOCVD ou d'une MBE, une structure à points quantiques de contrainte de traction est développée entre une couche de limitation de type p (107) et une couche d'expansion de courant de GaP (109) d'une diode électroluminescente au moyen d'une épitaxie de gouttelettes de métal. Une telle structure peut réduire efficacement la recombinaison non rayonnante d'interface entre la couche de limitation de type p (107) et la couche d'expansion de courant de GaP (109), et améliorer la qualité cristalline d'une couche fenêtre ainsi que les performances de la diode électroluminescente.
(ZH) 一种发光二极管结构及其制备方法,其特征在于利用MOCVD或是MBE在发光二极管p型限制层(107)与GaP电流扩展层(109)之间通过金属液滴外延的方法生长张应力量子点结构,这种结构可以有效的降低p型限制层(107)与GaP电流扩展层(109)间的界面非辐射复合,改善窗口层晶体质量,提升发光二级管的性能。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)