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1. (WO2019024513) QUANTUM DOT LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2019/024513 International Application No.: PCT/CN2018/079607
Publication Date: 07.02.2019 International Filing Date: 20.03.2018
IPC:
H01L 51/50 (2006.01) ,H01L 51/54 (2006.01) ,H01L 51/56 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
54
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
TCL集团股份有限公司 TCL CORPORATION [CN/CN]; 中国广东省惠州市 仲恺高新技术开发区十九号小区 No.19 Zone Zhongkai High Technology Development Zone Huizhou, Guangdong 516006, CN
Inventors:
梁柱荣 LIANG, Zhurong; CN
曹蔚然 CAO, Weiran; CN
刘佳 LIU, Jia; CN
Agent:
深圳中一专利商标事务所 SHENZHEN ZHONGYI PATENT AND TRADEMARK OFFICE; 中国广东省深圳市 福田区深南中路1014号老特区报社四楼(5号信箱) 4th Fl. (PO Box No.5) Old Shenzhen Special Zone Newspaper Building No. 1014 Shennan Middle Road, Futian District Shenzhen, Guangdong 518028, CN
Priority Data:
201710641801.X31.07.2017CN
Title (EN) QUANTUM DOT LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 量子点发光二极管及其制备方法
Abstract:
(EN) A quantum dot light emitting diode, comprising an anode (1), a p-type graphene layer (2), a hole injection layer (3), a quantum dot light emitting layer (5), and a cathode (7). The anode (1) and the cathode (7) are oppositely provided; the quantum dot light emitting layer (5) is provided between the anode (1) and the cathode (7); the p-type graphene layer (2) is provided between the abode (1) and the quantum dot light emitting layer (5); the hole injection layer (3) is provided between the p-type graphene layer (2) and the quantum dot light emitting layer (5); the p-type graphene layer (2) is made of p-type doped graphene; the p-type doped graphene is at least one selected from adsorption-doped graphene and lattice-doped graphene.
(FR) L'invention concerne une diode électroluminescente à points quantiques, comprenant une anode (1), une couche de graphène de type p (2), une couche d'injection de trous (3), une couche électroluminescente à points quantiques (5), et une cathode (7). L'anode (1) et la cathode (7) sont disposées de façon opposée; la couche électroluminescente à points quantiques (5) est disposée entre l'anode (1) et la cathode (7); la couche de graphène de type p (2) est disposée entre l'anode (1) et la couche électroluminescente à points quantiques (5); la couche d'injection de trous (3) est disposée entre la couche de graphène de type p (2) et la couche électroluminescente à points quantiques (5); la couche de graphène de type p (2) est constituée de graphène dopé de type p; le graphène dopé de type p est au moins un graphène choisi parmi le graphène dopé par adsorption et le réseau de graphène dopé.
(ZH) 一种量子点发光二极管,包括阳极(1)、p型石墨烯层(2)、空穴注入层(3)、量子点发光层(5)和阴极(7),所述阳极(1)和所述阴极(7)相对设置,量子点发光层(5)设置在所述阳极(1)和所述阴极(7)之间,所述p型石墨烯层(2)设于所述阳极(1)与所述量子点发光层(5)之间,所述空穴注入层(3)设于所述p型石墨烯层(2)与所述量子点发光层(5)之间,其中,所述p型石墨烯层(2)由p型掺杂石墨烯制成,所述p型掺杂石墨烯选自吸附掺杂石墨烯、晶格掺杂石墨烯中的至少一种。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)