Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019024365) FLUORESCENCE CHIP, MANUFACTURING METHOD THEREFOR, AND LIGHT-EMITTING APPARATUS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/024365 International Application No.: PCT/CN2017/114723
Publication Date: 07.02.2019 International Filing Date: 06.12.2017
IPC:
H01L 33/48 (2010.01) ,H01L 25/075 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
Applicants:
深圳光峰科技股份有限公司 APPOTRONICS CORPORATION LIMITED [CN/CN]; 中国广东省深圳市南山区粤海街道学府路63号高新区联合总部大厦20-22楼 20F-22F, High-Tech Zone Union Tower, No.63, Xuefu Road, Yuehai Street, Nanshan District, Shenzhen, Guangdong 518000, CN
Inventors:
李乾 LI, Qian; CN
陈雨叁 CHEN, Yusan; CN
胡飞 HU, Fei; CN
许颜正 XU, Yanzheng; CN
Priority Data:
201710655036.703.08.2017CN
Title (EN) FLUORESCENCE CHIP, MANUFACTURING METHOD THEREFOR, AND LIGHT-EMITTING APPARATUS
(FR) PUCE FLUORESCENTE, SON PROCÉDÉ DE FABRICATION ET APPAREIL ÉLECTROLUMINESCENT
(ZH) 荧光芯片及其制造方法和发光装置
Abstract:
(EN) An improved fluorescence chip (100) emitting excited light when being excited by external exciting light, a manufacturing method therefor, and a light-emitting apparatus (10) comprising the fluorescence chip (100). The fluorescence chip (100) comprises: a substrate (101); a reflecting layer (102), which is provided on the substrate (101); and a light-emitting layer (103), which is provided on the reflecting layer (102). Multiple independent light-emitting units (105) that are in two-dimensional arrangement and reflection separating portions (104) around the light-emitting units (105) are formed in the light-emitting layer (103).
(FR) L'invention concerne une puce fluorescente améliorée (100) émettant de la lumière excitée lorsqu'elle est excitée par une lumière d'excitation externe, son procédé de fabrication, et un appareil électroluminescent (10) comprenant la puce fluorescente (100). La puce fluorescente (100) comprend : un substrat (101); une couche réfléchissante (102), qui est disposée sur le substrat (101); et une couche électroluminescente (103), qui est disposée sur la couche réfléchissante (102). De multiples unités électroluminescentes indépendantes (105) qui sont dans un agencement bidimensionnel et des parties de séparation de réflexion (104) autour des unités électroluminescentes (105) sont formées dans la couche électroluminescente (103).
(ZH) 一种改进的在被外部激发光激发时发出受激光的荧光芯片(100)及其制造方法和包含荧光芯片(100)的发光装置(10)。荧光芯片(100)包括:基板(101);反射层(102),反射层(102)设置在基板(101)上;以及发光层(103),发光层(103)设置在反射层(102)上,在发光层(103)中形成有二维排列的多个独立的发光单元(105)和围绕各个发光单元(105)的反射隔离部(104)。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)