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1. (WO2019024354) FREQUENCY SELECTIVE SURFACE STRUCTURE
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Pub. No.:
WO/2019/024354
International Application No.:
PCT/CN2017/114051
Publication Date:
07.02.2019
International Filing Date:
30.11.2017
IPC:
H01Q 15/00
(2006.01) ,
H01P 7/08
(2006.01)
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
15
Devices for reflection, refraction, diffraction, or polarisation of waves radiated from an aerial, e.g. quasi-optical devices
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
P
WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE
7
Resonators of the waveguide type
08
Strip line resonators
Applicants:
深圳市景程信息科技有限公司 X-TRIP INFORMATION TECHNOLOGIES CO.,LTD
[CN/CN]; 中国广东省深圳 南山区粤海街道高新南七道数字技术园B1栋4楼B区梁艳妮 Liang Yanni B Area, 4th floor, B1 building, Digital technology Park, High-Tech South 7th road, Yuehai Street, Nanshan District ShenZhen, Guangdong 518057, CN
Inventors:
李庆娅 LI, Qingya
; CN
邓力 DENG, Li
; CN
李书芳 LI, Shufang
; CN
张贯京 ZHANG, Guanjing
; CN
葛新科 GE, Xinke
; CN
张红治 ZHANG, Hongzhi
; CN
Priority Data:
201710662442.6
04.08.2017
CN
Title
(EN)
FREQUENCY SELECTIVE SURFACE STRUCTURE
(FR)
STRUCTURE DE SURFACE SÉLECTIVE EN FRÉQUENCE
(ZH)
频率选择表面结构
Abstract:
(EN)
Disclosed is a frequency selective surface structure, comprising an upper dielectric layer, an air dielectric layer, and a lower dielectric layer. The upper dielectric layer comprises a first dielectric slab and a second dielectric slab; non-resonant inductive metal wire gratings are etched on the upper surface of the first dielectric slab and the lower surface of the second dielectric slab, a resonant layer is etched on the upper surface of the second dielectric slab, and the first dielectric slab and the second dielectric slab are cascaded by means of the resonant layer. The resonant layer comprises multiple hybrid resonators; each hybrid resonator comprises a metal sheet and a Jerusalem cross unit; the Jerusalem cross unit comprises a cross hollowed slot etched in the metal sheet and eight spiral slit structure units; the left and right sides of each tail end of the cross hollowed slot are separately and vertically communicated with a spiral slit structure unit; the structure of the lower dielectric layer is the same as that of the upper dielectric layer, the upper dielectric layer is cascaded with the lower dielectric layer by means of the air dielectric layer. The frequency selective surface structure provided by the present invention has good resonance performance and polarization stability.
(FR)
L'invention concerne une structure de surface sélective en fréquence, comprenant une couche diélectrique supérieure, une couche diélectrique d'air et une couche diélectrique inférieure. La couche diélectrique supérieure comprend une première plaque diélectrique et une seconde plaque diélectrique; des réseaux de fils métalliques inductifs non résonants sont gravés sur la surface supérieure de la première plaque diélectrique et la surface inférieure de la seconde plaque diélectrique, une couche résonante est gravée sur la surface supérieure de la seconde plaque diélectrique, et la première plaque diélectrique et la seconde plaque diélectrique sont en cascade au moyen de la couche résonante. La couche résonante comprend de multiples résonateurs hybrides; chaque résonateur hybride comprend une feuille métallique et une unité transversale de Jerusalem; l'unité transversale de Jerusalem comprend une fente en creux transversal gravée dans la feuille métallique et huit unités de structure à fente en spirale; les côtés gauche et droit de chaque extrémité de queue de la fente en creux transversal sont en communication séparée et verticale avec une unité de structure à fente en spirale; la structure de la couche diélectrique inférieure est la même que celle de la couche diélectrique supérieure, la couche diélectrique supérieure est en cascade avec la couche diélectrique inférieure au moyen de la couche diélectrique d'air. La structure de surface sélective en fréquence fournie par la présente invention présente une bonne performance de résonance et une bonne stabilité de polarisation.
(ZH)
本发明公开一种频率选择表面结构,包括上介质层、空气介质层和下介质层。上介质层包括第一介质板和第二介质板,第一介质板的上表面和第二介质板的下表面刻蚀有非谐振电感性的金属线栅,第二介质板的上表面刻蚀有谐振层,第一介质板与第二介质板通过谐振层级联。谐振层包括多个混合谐振器,每一个混合谐振器包括金属片和耶路撒冷十字单元,耶路撒冷十字单元包括一个刻蚀在金属片上的十字镂空槽和八个螺旋缝隙结构单元,十字镂空槽的每一末端左右两侧分别垂直连通一个螺旋缝隙结构单元;下介质层的结构与上介质层相同,上介质层通过空气介质层与下介质层级联。本发明提供的频率选择表面结构具有良好的谐振性能以及极化稳定性。
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language:
Chinese (
ZH
)
Filing Language:
Chinese (
ZH
)