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1. (WO2019024328) ETCHING SOLUTION FOR IGZO FILM LAYER AND ETCHING METHOD THEREFOR
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Pub. No.: WO/2019/024328 International Application No.: PCT/CN2017/111362
Publication Date: 07.02.2019 International Filing Date: 16.11.2017
IPC:
H01L 21/306 (2006.01) ,C09K 13/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13
Etching, surface-brightening or pickling compositions
04
containing an inorganic acid
06
with organic material
Applicants:
深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区公明街道塘明大道9-2号 No.9-2, Tangming Road, Gongming Street, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
甘启明 GAN, Qiming; CN
Agent:
深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE; 中国广东省深圳市 福田区上步中路深勘大厦15E Room 15E Shenkan Building, Shangbu Zhong Road, Futian District Shenzhen, Guangdong 518028, CN
Priority Data:
201710662486.904.08.2017CN
Title (EN) ETCHING SOLUTION FOR IGZO FILM LAYER AND ETCHING METHOD THEREFOR
(FR) SOLUTION DE GRAVURE POUR COUCHE DE FILM IGZO ET SON PROCÉDÉ DE GRAVURE
(ZH) IGZO膜层的蚀刻液及其蚀刻方法
Abstract:
(EN) An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-thin film transistor (TFT) device. The etching method for an IGZO film layer employs the foregoing etching solution for an IGZO film layer, and may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-TFT device.
(FR) La présente invention concerne une solution de gravure pour une couche de film IGZO et son procédé de gravure ; la solution de gravure comprend un acide, un phosphate, du peroxyde d'hydrogène et de l'eau, et la valeur du pH de la solution de gravure ne dépasse pas 5, et la solution peut réguler efficacement la vitesse de gravure de telle sorte que la vitesse de gravure est uniforme, et ainsi une couche de film IGZO (50) peut être gravée de manière stable sans introduire d'impuretés qui affectent les propriétés électriques IGZO, ce qui permet d'améliorer efficacement la stabilité d'un dispositif de transistor à couches minces (TFT) IGZO. Le procédé de gravure pour une couche de film IGZO utilise la solution de gravure susmentionnée pour une couche de film IGZO, et peut réguler efficacement la vitesse de gravure de telle sorte que la vitesse de gravure est uniforme, et ainsi une couche de film IGZO (50) peut être gravée de manière stable sans introduire d'impuretés qui affectent les propriétés électriques IGZO, ce qui permet d'améliorer efficacement la stabilité d'un dispositif TFT-IGZO.
(ZH) 一种IGZO膜层的蚀刻液及蚀刻方法,该蚀刻液包含酸、磷酸盐、过氧化氢及水,且该蚀刻液的pH值不超过5,可以有效控制蚀刻的速率,使蚀刻的速率均匀,能够稳定的蚀刻IGZO膜层(50),同时又不会引入一些影响IGZO电性的杂质,从而可有效提高IGZO-TFT器件的稳定性。所述IGZO膜层的蚀刻方法采用上述的IGZO膜层的蚀刻液,可以有效控制蚀刻的速率,使蚀刻的速率均匀,能够稳定地蚀刻IGZO膜层(50),同时又不会引入一些影响IGZO电性的杂质,从而可有效提高IGZO-TFT器件的稳定性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)