Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019024193) MASK
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/024193 International Application No.: PCT/CN2017/102584
Publication Date: 07.02.2019 International Filing Date: 21.09.2017
IPC:
C23C 14/04 (2006.01) ,H01L 51/56 (2006.01) ,G03F 1/42 (2012.01) ,G03F 1/38 (2012.01) ,G03F 1/00 (2012.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04
Coating on selected surface areas, e.g. using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38
Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
42
Alignment or registration features, e.g. alignment marks on the mask substrates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38
Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Applicants:
武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国湖北省武汉市 东湖新技术开发区高新大道666号光谷生物创新园C5栋305室 305 Room, Building C5, Biolake of Optics Valley No.666 Gaoxin Avenue, Wuhan East Lake High-Tech Development Zone Wuhan, Hubei 430070, CN
Inventors:
蒋谦 JIANG, Qian; CN
陈永胜 CHEN, Yungsheng; CN
Agent:
深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.; 中国广东省深圳市 南山区高新区粤兴三道8号中国地质大学产学研基地中地大楼A806 Room A806, Zhongdi Building, China University of Geosciences Base, No.8 Yuexing 3rd Road High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057, CN
Priority Data:
201710649786.301.08.2017CN
Title (EN) MASK
(FR) MASQUE
(ZH) 一种掩膜板
Abstract:
(EN) Provided is a mask. The mask comprises an alignment zone (101). The alignment zone (101) is used for obtaining a preset reflectivity under illumination with certain intensity for alignment. The alignment zone (101) is subjected to reflection treatment, and thus the mask has the reflectivity with the same range with the preset reflectivity. Through the reflection treatment, when masks of different types are aligned, the same picture definition matched with the corresponding masks can be achieved without adjusting the light source intensity or picture contrast, manual operation is reduced, and the production efficiency is improved.
(FR) Cette invention concerne un masque. Le masque comprend une zone d'alignement (101). La zone d'alignement (101) est utilisée pour obtenir une réflectivité prédéfinie sous éclairage avec une certaine intensité pour l'alignement. La zone d'alignement (101) est soumise à un traitement de réflexion, et ainsi le masque a une réflectivité dans la même plage que la réflectivité prédéfinie. Par le biais du traitement de réflexion, lorsque des masques de différents types sont alignés, la même définition d'image mise en correspondance avec les masques correspondants peut être obtenue sans ajuster l'intensité de la source de lumière ou le contraste d'image, les opérations manuelles sont réduites, et le rendement de production est amélioré.
(ZH) 一种掩膜板,掩膜板包括对位区(101),对位区(101)用于在一定强度光照下获得预设反射率以进行对位;对对位区(101)进行反射处理,以使得掩膜板具有与预设反射率相同范围的反射率。通过这种反射处理,使得不同类型的掩膜板在对位时,不需要调整光源强度或画面对比度也能获得相同且适合相应掩膜板的画面清晰度,减少了人工作业,提高了生产效率。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)