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1. (WO2019023945) FLUIDIC CHANNEL STRUCTURE DEVICE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/023945 International Application No.: PCT/CN2017/095501
Publication Date: 07.02.2019 International Filing Date: 01.08.2017
IPC:
B01L 3/00 (2006.01) ,B81C 1/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
L
CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
3
Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
1
Manufacture or treatment of devices or systems in or on a substrate
Applicants:
深圳华大基因研究院 BGI SHENZHEN [CN/CN]; 中国广东省深圳市 盐田区北山工业区综合楼 Main Building, Beishan Industrial Zone, Yantian District Shenzhen, Guangdong 518083, CN
完整基因有限公司 COMPLETE GENOMICS, INC. [US/US]; 美国加利福尼亚州圣荷西市 果园大路2904号 2904 Orchard Parkway San Jose, CA 95134, US
Inventors:
云全新 YUN, Quanxin; CN
林建勋 LIN, Jianxun; CN
李汉东 LI, Handong; CN
Agent:
中国国际贸易促进委员会专利商标事务所 CCPIT PATENT AND TRADEMARK LAW OFFICE; 中国北京市 西城区阜成门外大街2号万通新世界广场8层 8th Floor, Vantone New World Plaza, 2 Fuchengmenwai Street, Xicheng District Beijing 100037, CN
Priority Data:
Title (EN) FLUIDIC CHANNEL STRUCTURE DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF DE STRUCTURE DE CANAL FLUIDIQUE ET SON PROCÉDÉ DE FABRICATION
(ZH) 流道结构器件及其制造方法
Abstract:
(EN) Disclosed are a fluidic channel structure device and a manufacturing method therefor, relating to the technical field of semiconductors. The method comprises: providing a first substrate (21); forming a first trench (31) in the first substrate (21); forming a material layer (43) on the first substrate (21), wherein a part of the material layer (43) is formed in the first trench (31) in order to form a second trench (32); forming a sacrificial layer (45) on the material layer (43), wherein the sacrificial layer (45) comprises a first part (451) filling the second trench (32); bonding the first substrate (21) formed with the sacrificial layer (45) to a second substrate (47), so as to locate the material layer (43) between the first substrate (21) and the second substrate (47); thinning a back surface of the first substrate (21) to expose the first part (451) of the sacrificial layer (45); and removing the first part (451) using a selective etching process to form a fluidic channel (50). The method can realize a fluidic channel structure device having a vertical fluidic channel.
(FR) L'invention concerne un dispositif de structure de canal fluidique et son procédé de fabrication, se rapportant au domaine technique des semi-conducteurs. Le procédé comprend : la fourniture d'un premier substrat (21); former une première tranchée (31) dans le premier substrat (21); former une couche de matériau (43) sur le premier substrat (21), une partie de la couche de matériau (43) etant formée dans la première tranchée (31) pour former une seconde tranchée (32); former une couche sacrificielle (45) sur la couche de matériau (43), la couche sacrificielle (45) comprenant une première partie (451) remplissant la seconde tranchée (32); lier le premier substrat (21) formé avec la couche sacrificielle (45) à un second substrat (47), de façon à localiser la couche de matériau (43) entre le premier substrat (21) et le second substrat (47); amincir une surface arrière du premier substrat (21) pour exposer la première partie (451) de la couche sacrificielle (45); et retirer la première partie (451) à l'aide d'un processus de gravure sélective pour former un canal fluidique (50). Le procédé peut réaliser un dispositif de structure de canal fluidique ayant un canal fluidique vertical.
(ZH) 一种流道结构器件及其制造方法,涉及半导体技术领域。该方法包括:提供第一基片(21);在该第一基片(21)中形成第一沟槽(31);在该第一基片(21)上形成材料层(43),其中该材料层(43)的一部分形成在该第一沟槽(31)中以形成第二沟槽(32);在该材料层(43)上形成牺牲层(45),该牺牲层(45)包括填充在该第二沟槽(32)中的第一部分(451);将形成该牺牲层(45)后的第一基片(21)与第二基片(47)键合,使得该材料层(43)位于该第一基片(21)与该第二基片(47)之间;对该第一基片(21)的背面进行减薄处理,以露出该牺牲层(45)的第一部分(451);以及利用选择性刻蚀工艺去除该第一部分(451),从而形成流道(50)。该方法可以实现具有垂直流道的流道结构器件。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)