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1. (WO2019023797) ORGANOMETALLIC COMPOUNDS AND METHODS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE
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Pub. No.: WO/2019/023797 International Application No.: PCT/CA2018/050933
Publication Date: 07.02.2019 International Filing Date: 31.07.2018
IPC:
C07F 7/22 (2006.01) ,C23C 16/40 (2006.01) ,C23F 1/02 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
22
Tin compounds
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
02
Local etching
Applicants:
SEASTAR CHEMICALS INC. [CA/CA]; 2061 Henry Ave W Sidney, British Columbia V8L 5Z6, CA
Inventors:
ODEDRA, Rajesh; CA
DONG, Cunhai; CA
FABULYAK, Diana; CA
GRAFF, Wesley; SG
Agent:
THOMPSON, Douglas; CA
COOPER, Michael; CA
Priority Data:
297510402.08.2017CA
Title (EN) ORGANOMETALLIC COMPOUNDS AND METHODS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE
(FR) COMPOSÉS ORGANOMÉTALLIQUES ET PROCÉDÉS DE DÉPÔT D'OXYDE D'ÉTAIN DE HAUTE PURETÉ
Abstract:
(EN) Disclosed herein are compounds useful for the deposition of high purity tin oxide. Also disclose are methods for the deposition of tin oxide films using such compounds. Such films demonstrate high conformality, high etch selectivity and are optically transparent. Such compounds are those of the Formula as follows R x -Sn-A 4-x wherein: A is selected from the group consisting of (Y a R' z ) and a 3- to 7-membered N- containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R' group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.
(FR) L'invention concerne des composés utiles pour le dépôt d'oxyde d'étain de haute pureté. L'invention concerne également des procédés de dépôt de films d'oxyde d'étain utilisant de tels composés. De tels films présentent une conformité élevée, une sélectivité de gravure élevée et sont optiquement transparents. De tels composés sont ceux de la formule suivante : R x -Sn-A 4-x dans laquelle : A est choisi dans le groupe constitué par (Y a R 'z) et un groupe hétérocyclique contenant du N de 3 à 7 chaînons ; chaque groupe R est indépendamment choisi dans le groupe constitué par un groupe alkyle ou aryle ayant de 1 à 10 atomes de carbone ; chaque groupe R' est indépendamment choisi dans le groupe constitué par un groupe alkyle, acyle ou aryle ayant de 1 à 10 atomes de carbone ; x est un nombre entier de 0 à 4 ; a est un nombre entier de 0 à 1 ; Y est choisi dans le groupe constitué par N, O, S, et P ; et z est 1 lorsque Y est O, S ou lorsque Y est absent et z est 2 lorsque Y est N ou P.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)