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1. (WO2019021713) SHOWER HEAD AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/021713 International Application No.: PCT/JP2018/023937
Publication Date: 31.01.2019 International Filing Date: 25.06.2018
IPC:
H01L 21/3065 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/505 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
木村 功一 KIMURA Koichi; JP
三雲 晃 MIKUMO Akira; JP
Agent:
中田 元己 NAKATA Motomi; JP
森田 剛史 MORITA Takeshi; JP
高城 政浩 TAKAGI Masahiro; JP
緒方 大介 OGATA Daisuke; JP
Priority Data:
2017-14619228.07.2017JP
Title (EN) SHOWER HEAD AND METHOD FOR MANUFACTURING SAME
(FR) POMME DE DOUCHE ET SON PROCÉDÉ DE FABRICATION
(JA) シャワーヘッド及びその製造方法
Abstract:
(EN) The shower head according to the present invention is provided in a chamber of a semiconductor manufacturing device, said shower head facing a wafer holding body. The shower head is provided with: a disc-like member, which has a disc shape, and which has a plurality of through holes penetrating the disc-like member in the board thickness direction; a conductive body for high frequencies, said conductive body being embedded in the disc-like member; a hole that is provided extending in the thickness direction of the disc-like member such that a part of the conductive body is exposed from a bottom section thereof; an electrode terminal section, which has a base section that is disposed in the hole by being electrically connected to the conductive body, and a columnar section that is provided on the base section; a cylindrical member, which has a first end section that is fitted in the outer side of the columnar section, said first end section facing the conductive body, and a second end section on the opposite side to the first end section, said second end section having an outer diameter that is smaller than that of the first end section, and an inner diameter that is larger than that of the first end section; and a sealing member applied around the first end section.
(FR) La pomme de douche selon la présente invention est disposée dans une chambre d'un dispositif de fabrication de semi-conducteurs, ladite pomme de douche faisant face à un corps de support de tranche. La pomme de douche comprend : un élément de type disque, qui a une forme de disque, et qui a une pluralité de trous traversants pénétrant dans l'élément de type disque dans la direction de l'épaisseur de la carte ; un corps conducteur pour hautes fréquences, ledit corps conducteur étant intégré dans l'élément de type disque ; un trou qui s'étend dans la direction de l'épaisseur de l'élément en forme de disque de telle sorte qu'une partie du corps conducteur est exposée à partir d'une section inférieure de celui-ci ; une section de borne d'électrode, qui a une section de base qui est disposée dans le trou en étant électriquement connectée au corps conducteur, et une section en colonne qui est disposée sur la section de base ; un élément cylindrique, qui a une première section d'extrémité qui est adaptée dans le côté externe de la section en colonne, ladite première section d'extrémité faisant face au corps conducteur, et une seconde section d'extrémité sur le côté opposé à la première section d'extrémité, ladite seconde section d'extrémité ayant un diamètre externe qui est plus petit que celui de la première section d'extrémité, et un diamètre interne qui est plus grand que celui de la première section d'extrémité ; et un élément d'étanchéité appliqué autour de la première section d'extrémité.
(JA) 半導体製造装置のチャンバー内においてウエハ保持体に対向して設けられるシャワーヘッドであって、円板状であり板厚方向に貫通する複数の貫通孔を有する円板状部材と、円板状部材に埋設された高周波用の導電体と、円板状部材の厚み方向に延び底部に導電体の一部が露出するように設けられた穴部と、穴部に配置され導電体と電気的に接続されるベース部とベース部上に設けられた円柱形状部とを有する電極端子部と、円柱形状部の外側に嵌められ導電体に対向する第1端部と第1端部と反対側の第2端部とを有し第2端部の外径が第1端部の外径よりも小さくかつ第2端部の内径が第1端部の内径よりも大きい円筒状部材と、第1端部の周りに充填されている封止部材と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)