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1. (WO2019017368) CUTTING METHOD
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/017368 International Application No.: PCT/JP2018/026852
Publication Date: 24.01.2019 International Filing Date: 18.07.2018
IPC:
H01L 21/301 (2006.01) ,B23K 26/53 (2014.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301
to subdivide a semiconductor body into separate parts, e.g. making partitions
[IPC code unknown for B23K 26/53]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
岩谷産業株式会社 IWATANI CORPORATION [JP/JP]; 大阪府大阪市中央区本町3丁目6番4号 6-4, Hommachi 3-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP/JP]; 静岡県浜松市東区市野町1126番地の1 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 4358558, JP
Inventors:
真鍋 俊樹 MANABE, Toshiki; JP
妹尾 武彦 SENOO, Takehiko; JP
泉 浩一 IZUMI, Koichi; JP
荘所 正 SHOJO, Tadashi; JP
荻原 孝文 OGIWARA, Takafumi; JP
坂本 剛志 SAKAMOTO, Takeshi; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2017-14087220.07.2017JP
Title (EN) CUTTING METHOD
(FR) PROCÉDÉ DE DÉCOUPE
(JA) 切断加工方法
Abstract:
(EN) This cutting method includes a step for forming a modified region in an object for processing (1), and a step for cutting the object for processing (1) along a cutting line after forming the modified region in the object for processing (1). In the step for cutting the object for processing (1), in a state where the object for processing (1) is fixed to a support material by the weight of the object for processing and/or adsorption, dry etching is performed from a front surface (3) to a rear surface (4) of the object for processing (1), thereby forming a groove from the front surface (3) to the rear surface (4) of the object for processing (1).
(FR) Ce procédé de découpe comprend une étape de formation d'une région modifiée dans un objet à traiter (1), et une étape de découpe de l'objet à traiter (1) le long d'une ligne de découpe après la formation de la région modifiée dans l'objet à traiter (1). Lors de l'étape de découpe de l'objet à traiter (1), dans un état dans lequel l'objet à traiter (1) est fixé à un matériau de support par le poids de l'objet à traiter et/ou par l'adsorption, une gravure sèche est effectuée d'une surface avant (3) à une surface arrière (4) de l'objet à traiter (1), formant ainsi une rainure de la surface avant (3) à la surface arrière (4) de l'objet à traiter (1).
(JA) 切断加工方法は、加工対象物(1)に改質領域を形成する工程と、加工対象物(1)に改質領域を形成した後に、切断予定ラインに沿って加工対象物(1)を切断する工程とを備えている。加工対象物(1)を切断する工程では、加工対象物(1)が自重および吸着の少なくともいずれかにより支持材に固定された状態で、加工対象物(1)の表面(3)から裏面(4)に向かってドライエッチング処理が施されることにより、加工対象物(1)の表面(3)から裏面(4)に至るように溝が形成される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)