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1. (WO2019009526) MASK AND METHOD FOR MANUFACTURING MASK, AND MOTHER PLATE
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Pub. No.: WO/2019/009526 International Application No.: PCT/KR2018/006457
Publication Date: 10.01.2019 International Filing Date: 07.06.2018
IPC:
C25D 1/00 (2006.01) ,C25D 1/10 (2006.01) ,C25D 1/20 (2006.01) ,H01L 51/00 (2006.01) ,H01L 21/288 (2006.01) ,H01L 21/033 (2006.01) ,H01L 21/308 (2006.01)
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
1
Electroforming
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
1
Electroforming
10
Moulds; Masks; Masterforms
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
1
Electroforming
20
Separation of the formed objects from the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
288
from a liquid, e.g. electrolytic deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033
comprising inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
주식회사 티지오테크 TGO TECH. CORPORATION [KR/KR]; 경기도 용인시 기흥구 공세로 140-11 140-11, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17085, KR
Inventors:
전진완 JEON, Jin Wan; KR
신일권 SHIN, Il Kwon; KR
이유진 LEE, Yoo Jin; KR
Agent:
김한 KIM, Han; KR
Priority Data:
10-2017-008476804.07.2017KR
10-2017-009363424.07.2017KR
Title (EN) MASK AND METHOD FOR MANUFACTURING MASK, AND MOTHER PLATE
(FR) MASQUE ET PROCÉDÉ DE FABRICATION DE MASQUE, ET PLATINE MÈRE
(KO) 마스크 및 마스크의 제조 방법, 모판
Abstract:
(EN) The present invention relates to a mask and a method for manufacturing a mask, and a mother plate and a method for manufacturing a mother plate. A mask (100) according to the present invention, which is manufactured by electroforming, comprises a mask body and a plurality of mask patterns (PP), wherein the mask body comprises a plurality of masking cells (110) and a center part (111) of each of the masking cells (110) has a greater thickness than an edge part (115) of each of the masking cells (111).
(FR) La présente invention porte sur un masque et sur un procédé de fabrication de masque, et sur une platine mère et sur un procédé de fabrication d’une platine mère. Un masque (100) selon la présente invention, lequel est fabriqué par électroformation, comprend un corps de masque et une pluralité de motifs de masque (PP), le corps de masque comprenant une pluralité de cellules de masquage (110) et une partie centrale (111) de chacune des cellules de masquage (110) a une épaisseur supérieure à celle d’une partie de bord (115) de chacune des cellules de masquage (111).
(KO) 본 발명은 마스크 및 마스크의 제조 방법, 모판 및 모판의 제조 방법에 관한 것이다. 본 발명에 따른 마스크(100)는, 전주 도금(Electroforming)으로 제조된 마스크로서, 마스크 바디 및 복수의 마스크 패턴(PP)을 포함하고, 마스크 바디는 복수의 마스킹 셀(110)을 포함하며, 마스킹 셀(110)의 중심부(111)의 두께는 마스킹 셀(111)의 테두리부(115)의 두께보다 두꺼운 것을 특징으로 한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)