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1. (WO2019009306) INDIUM PHOSPHIDE SINGLE CRYSTAL AND INDIUM PHOSPHIDE SINGLE CRYSTAL SUBSTRATE
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Pub. No.: WO/2019/009306 International Application No.: PCT/JP2018/025272
Publication Date: 10.01.2019 International Filing Date: 03.07.2018
IPC:
C30B 29/40 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
柳澤 拓弥 YANAGISAWA, Takuya; JP
鴻池 一暁 KONOIKE, Kazuaki; JP
橋尾 克司 HASHIO, Katsushi; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
PCT/JP2017/02446004.07.2017JP
Title (EN) INDIUM PHOSPHIDE SINGLE CRYSTAL AND INDIUM PHOSPHIDE SINGLE CRYSTAL SUBSTRATE
(FR) MONOCRISTAL DE PHOSPHURE D'INDIUM ET SUBSTRAT MONOCRISTALLIN DE PHOSPHURE D'INDIUM
(JA) リン化インジウム単結晶体およびリン化インジウム単結晶基板
Abstract:
(EN) Provided is an indium phosphide single crystal having an oxygen concentration of less than 1 × 1016 atoms·cm-3 and including a cylindrical straight body portion. The diameter of the straight body portion is 100-150 mm, or larger than 100 mm and 150 mm or smaller. Also provided is an indium phosphide single crystal substrate having an oxygen concentration of less than 1 × 1016 atoms·cm-3 and having a diameter of 100-150 mm, or larger than 100 mm and 150 mm or smaller.
(FR) L'invention concerne un monocristal de phosphure d'indium présentant une concentration en oxygène inférieure à 1 × 1016 atomes/cm-3 et comportant une partie de corps droit cylindrique. Le diamètre de la partie de corps droit est compris entre 100 et 150 mm, ou est de plus de 100 mm et de 150 mm ou moins. L'invention concerne également un substrat monocristallin de phosphure d'indium présentant une concentration en oxygène inférieure à 1 × 1016 atomes/cm-3 et présentant un diamètre compris entre 100 et 150 mm, ou de plus de 100 mm et de 150 mm ou moins.
(JA) リン化インジウム単結晶体は、酸素濃度が1×1016原子・cm-3未満であり、円柱状の直胴部を含み、直胴部の直径が100mm以上150mm以下または100mmより大きく150mm以下である。リン化インジウム単結晶基板は、酸素濃度が1×1016原子・cm-3未満であり、直径が100mm以上150mm以下または100mmより大きく150mm以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)