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1. (WO2019009143) METHOD FOR MANUFACTURING INFRARED-RECEIVING ELEMENT, METHOD FOR MANUFACTURING OPTICAL SENSOR, LAMINATE, RESIST COMPOSITION, AND KIT
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Pub. No.: WO/2019/009143 International Application No.: PCT/JP2018/024257
Publication Date: 10.01.2019 International Filing Date: 27.06.2018
IPC:
G03F 7/40 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01) ,H01L 27/144 (2006.01) ,H01L 31/10 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
高桑 英希 TAKAKUWA Hideki; JP
東 耕平 HIGASHI Kohei; JP
Agent:
特許業務法人特許事務所サイクス SIKS & CO.; 東京都中央区京橋一丁目8番7号 京橋日殖ビル8階 8th Floor, Kyobashi-Nisshoku Bldg., 8-7, Kyobashi 1-chome, Chuo-ku, Tokyo 1040031, JP
Priority Data:
2017-13086204.07.2017JP
Title (EN) METHOD FOR MANUFACTURING INFRARED-RECEIVING ELEMENT, METHOD FOR MANUFACTURING OPTICAL SENSOR, LAMINATE, RESIST COMPOSITION, AND KIT
(FR) PROCÉDÉ DE FABRICATION D'ÉLÉMENT RÉCEPTEUR D'INFRAROUGES, PROCÉDÉ DE FABRICATION DE CAPTEUR OPTIQUE, STRATIFIÉ, COMPOSITION DE PHOTORÉSINE ET KIT
(JA) 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット
Abstract:
(EN) Provided are a method for manufacturing an infrared-receiving element, and a method for manufacturing an optical sensor, wherein infrared radiation can be detected at an increased S/N ratio. Also provided are a laminate, a resist composition, and a kit. In this method for manufacturing an infrared-receiving element, a pattern of a resist film having a thickness of at least 5 μm is formed on a support using a resist composition, and then ion implantation is performed on the support using the pattern of the resist film as a mask. In addition, in this method for manufacturing an optical sensor, an infrared-receiving element is manufactured by said method for manufacturing an infrared-receiving element, and then an infrared-transmitting filter layer that shields visible light and at least partially transmits infrared light is formed in at least a portion of a region in which the ion implantation of the infrared-receiving element has been performed.
(FR) L'invention concerne un procédé pour la fabrication d'un élément récepteur d'infrarouges et un procédé pour la fabrication d'un capteur optique, dans lequel un rayonnement infrarouge peut être détecté à un rapport S/N augmenté. L'invention concerne également un stratifié, une composition de photorésine et un kit. Dans ce procédé de fabrication d'un élément récepteur d'infrarouges, un motif d'un film de photorésine ayant une épaisseur d'au moins 5 µm est formé sur un support à l'aide d'une composition de photorésine, puis une implantation ionique est effectuée sur le support en employant le motif du film de photorésine en tant que masque. De plus, dans ce procédé de fabrication d'un capteur optique, un élément récepteur d'infrarouges est fabriqué par ledit procédé de fabrication d'un élément récepteur d'infrarouges, puis une couche de filtre transmettant les infrarouges qui pare la lumière visible et transmet au moins partiellement la lumière infrarouge est formée dans au moins une partie d'une région dans laquelle l'implantation ionique de l'élément récepteur d'infrarouges a été effectuée.
(JA) 赤外線のS/N比を高めて検出できる赤外線受光素子の製造方法および光センサの製造方法を提供する。また、積層体、レジスト組成物およびキットを提供する。 本発明の赤外線受光素子の製造方法は、レジスト組成物を用いて支持体上に厚さ5μm以上のレジスト膜のパターンを形成したのち、レジスト膜のパターンをマスクとして支持体に対してイオン注入を行う。また、本発明の光センサの製造方法は、本発明の赤外線受光素子の製造方法により赤外線受光素子を製造し、次いで、赤外線受光素子のイオン注入が行われた領域上の少なくとも一部に、可視光を遮光し赤外線の少なくとも一部を透過させる赤外線透過フィルタ層を形成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)