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1. (WO2019009086) SEMICONDUCTOR LASER DEVICE
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Pub. No.: WO/2019/009086 International Application No.: PCT/JP2018/023559
Publication Date: 10.01.2019 International Filing Date: 21.06.2018
IPC:
H01S 5/022 (2006.01) ,G11B 7/127 (2012.01) ,H01L 23/40 (2006.01) ,H01S 5/024 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
022
Mountings; Housings
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7
Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation, reproducing using an optical beam at lower power; Record carriers therefor
12
Heads, e.g. forming of the optical beam spot or modulation of the optical beam
125
Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
127
Lasers; Multiple laser arrays
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
40
Mountings or securing means for detachable cooling or heating arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
024
Cooling arrangements
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
大森 弘治 OOMORI Kouji; --
笠井 輝明 KASAI Teruaki; --
Agent:
鎌田 健司 KAMATA Kenji; JP
前田 浩夫 MAEDA Hiroo; JP
Priority Data:
2017-13376007.07.2017JP
Title (EN) SEMICONDUCTOR LASER DEVICE
(FR) DISPOSITIF LASER À SEMI-CONDUCTEUR
(JA) 半導体レーザ装置
Abstract:
(EN) This semiconductor laser device (1) is provided with: a lower electrode block (10) which has a first terminal hole and has a first and second connection hole on both sides of a recess that houses a submount where a semiconductor laser element is arranged; an upper electrode block (60) which has a third connection hole that communicates with the first connection hole, and a second terminal hole; a heatsink (110) on which the lower electrode block (10) is arranged and which has a fourth connection hole that communicates with the second connection hole; and an optical component (100) which is mounted on the upper electrode block (60). The lower electrode block (10) and the upper electrode block (60) are fastened by first fastening members (90, 90), and the lower electrode block (10) and the heatsink (110) are fastened by second fastening members (91, 91).
(FR) La présente invention concerne un dispositif laser à semi-conducteur qui comprend : un bloc d'électrode inférieur (10) qui comporte un premier trou de borne et comporte un premier et un deuxième trou de connexion sur les deux côtés d'un renfoncement qui loge un sous-ensemble dans lequel un élément laser à semi-conducteur est agencé; un bloc d'électrode supérieur (60) qui comporte un troisième trou de connexion qui communique avec le premier trou de connexion, et un second trou de borne; un dissipateur thermique (110) sur lequel le bloc d'électrode inférieur (10) est agencé et qui comporte un quatrième trou de connexion qui communique avec le deuxième trou de connexion; et un composant optique (100) qui est monté sur le bloc d'électrode supérieur (60). Le bloc d'électrode inférieur (10) et le bloc d'électrode supérieur (60) sont fixés par des premiers éléments de fixation (90, 90), et le bloc d'électrode inférieur (10) et le dissipateur thermique (110) sont fixés par des seconds éléments de fixation (91, 91).
(JA) 半導体レーザ装置(1)は、第1端子孔と、半導体レーザ素子が配設されたサブマウントを収容する凹部の両側に第1及び第2接続孔とを有する下部電極ブロック(10)と、第1接続孔と連通した第3接続孔と、第2端子孔とを有する上部電極ブロック(60)と、下部電極ブロック(10)が配設され、第2接続孔に連通した第4接続孔を有するヒートシンク(110)と、上部電極ブロック(60)に取付けられた光学部品(100)と、を備えている。下部電極ブロック(10)及び上部電極ブロック(60)は第1締結部材(90,90)により締結され、下部電極ブロック(10)とヒートシンク(110)とは第2締結部材(91,91)により締結されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)