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1. (WO2019009018) QUARTZ GLASS CRUCIBLE
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Pub. No.: WO/2019/009018 International Application No.: PCT/JP2018/022226
Publication Date: 10.01.2019 International Filing Date: 11.06.2018
IPC:
C30B 29/06 (2006.01) ,C03B 20/00 (2006.01) ,C30B 15/10 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
B
MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
20
Processes specially adapted for the production of quartz or fused silica articles
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 2-1, Shibaura 1-chome, Minato-ku Tokyo 1058634, JP
Inventors:
吉岡 拓麿 YOSHIOKA Takuma; JP
大原 真美 OHARA Masami; JP
Agent:
鷲頭 光宏 WASHIZU Mitsuhiro; JP
緒方 和文 OGATA Kazufumi; JP
黒瀬 泰之 KUROSE Yasuyuki; JP
Priority Data:
2017-13140804.07.2017JP
Title (EN) QUARTZ GLASS CRUCIBLE
(FR) CREUSET EN VERRE DE QUARTZ
(JA) 石英ガラスルツボ
Abstract:
(EN) [Problem] To provide a quartz glass crucible with which it is possible to achieve both enhancement of the manufacturing yield of silicon monocrystals and suppression of pinhole generation in the monocrystals. [Solutions] A quartz glass crucible 1 includes: a cylindrical straight body section 1a; a curved bottom section 1b; and a corner section 1c provided between the straight body section 1a and the bottom section 1b, wherein, in an upper section 1a1 of the straight body section 1a, the air-bubble content of an inner-surface-layer section between an inner surface and a depth of 0.5 mm therefrom is 0.2-2%, the air-bubble content of the inner-surface-layer section in a lower section 1a2 of the straight body section 1a is greater than 0.1% and equal to or less than 1.3 times a lower limit of the air-bubble content of the upper section 1a1 of the straight body section 1a, the air-bubble content of the inner-surface-layer section in the corner section 1c is greater than 0.1% and equal to or less than 0.5%, and the air-bubble content of the inner-surface-layer section in the bottom section 1b is equal to or less than 0.1%.
(FR) Le problème décrit par la présente invention est de pourvoir à un creuset en verre de quartz permettant d'obtenir à la fois l'amélioration du rendement de fabrication de monocristaux de silicium et la suppression de la formation de trous d'épingle dans les monocristaux. La solution selon l'invention porte sur un creuset en verre de quartz (1) qui comprend : une section de corps droit (1a) cylindrique ; une section inférieure (1b) incurvée ; et une section de coin (1c) disposée entre la section de corps droit (1a) et la section inférieure (1b). Dans une section supérieure (1a1) de la section de corps droit (1a), la teneur en bulles d'air d'une section de couche de surface interne entre une surface interne et une profondeur de 0,5 mm à partir de cette dernière est de 0,2 à 2 %, la teneur en bulles d'air de la section de couche de surface interne dans une section inférieure (1a2) de la section de corps droit (1a) est supérieure à 0,1 % et inférieure ou égale à 1,3 fois une limite inférieure de la teneur en bulles d'air de la section supérieure (1a1) de la section de corps droit (1a), la teneur en bulles d'air de la section de couche de surface interne dans la section de coin (1c) est supérieure à 0,1 % et inférieure ou égale à 0,5 %, et la teneur en bulles d'air de la section de couche de surface interne dans la section inférieure (1b) est inférieure ou égale à 0,1 %.
(JA) 【課題】シリコン単結晶の製造歩留まりの向上と単結晶中のピンホールの発生の抑制とを両立させることが可能な石英ガラスルツボを提供する。 【解決手段】石英ガラスルツボ1は、円筒状の直胴部1aと、湾曲した底部1bと、直胴部1aと底部1bとの間に設けられたコーナー部1cとを有し、直胴部1aの上部1aにおける内表面から深さ0.5mmまでの内側表層部の気泡含有率は0.2%以上2%以下であり、直胴部1aの下部1aにおける内側表層部の気泡含有率は0.1%よりも大きく直胴部1aの上部1aの気泡含有率の下限値の1.3倍以下であり、コーナー部1cにおける内側表層部の気泡含有率は0.1%よりも大きく0.5%以下であり、底部1bにおける内側表層部の気泡含有率は0.1%以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)