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1. (WO2019008809) ADHESIVE SHEET FOR STEALTH DICING, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
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Pub. No.: WO/2019/008809 International Application No.: PCT/JP2018/003593
Publication Date: 10.01.2019 International Filing Date: 02.02.2018
IPC:
H01L 21/301 (2006.01) ,C09J 4/00 (2006.01) ,C09J 7/20 (2018.01) ,C09J 11/06 (2006.01) ,C09J 201/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301
to subdivide a semiconductor body into separate parts, e.g. making partitions
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
J
ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
4
Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
[IPC code unknown for C09J 7/20]
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
J
ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
11
Features of adhesives not provided for in group C09J9/76
02
Non-macromolecular additives
06
organic
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
J
ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201
Adhesives based on unspecified macromolecular compounds
Applicants:
リンテック株式会社 LINTEC CORPORATION [JP/JP]; 東京都板橋区本町23番23号 23-23, Honcho, Itabashi-ku, Tokyo 1730001, JP
Inventors:
福元 孝斉 FUKUMOTO Kosei; JP
山下 茂之 YAMASHITA Shigeyuki; JP
中村 優智 NAKAMURA Masatomo; JP
Agent:
早川 裕司 HAYAKAWA Yuzi; JP
村雨 圭介 MURASAME Keisuke; JP
飯田 理啓 IIDA Michihiro; JP
Priority Data:
2017-13030003.07.2017JP
Title (EN) ADHESIVE SHEET FOR STEALTH DICING, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
(FR) FEUILLE ADHÉSIVE POUR DÉCOUPAGE EN DÉS FURTIFS, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) ステルスダイシング用粘着シートおよび半導体装置の製造方法
Abstract:
(EN) An adhesive sheet 1 for stealth dicing which is at least used in the cutting and separation of a semiconductor wafer having a modified layer formed in the interior thereof into individual chips in a room-temperature environment, wherein the adhesive sheet 1 for stealth dicing is provided with a substrate 11 and an adhesive layer 12 layered upon one surface side of the substrate 11, and when the adhesive sheet 1 for stealth dicing is adhered to a silicon wafer via the adhesive layer 12, the shearing force at 23℃ at the interface of the adhesive layer 12 and the silicon wafter is in the range of 5 N/(3 mm×20 mm) to 70 N/(3 mm×20 mm). This adhesive sheet 1 for stealth dicing enables excellent cleaning of the chips.
(FR) L'invention concerne une feuille adhésive 1 pour découpage en dés furtifs qui est au moins utilisée dans la découpe et la séparation d'une tranche semi-conductrice ayant une couche modifiée formée à l'intérieur de celle-ci en puces individuelles dans un environnement à température ambiante, la feuille adhésive 1 pour découpage en dés furtifs comprenant un substrat 11 et une couche adhésive 12 stratifiée sur un côté de surface du substrat 11, et lorsque la feuille adhésive 1 pour le découpage en dés furtifs est collée à une tranche de silicium par l'intermédiaire de la couche adhésive 12, la force de cisaillement à 23 °C à l'interface de la couche adhésive 12 et du substrat de silicium est dans la plage de 5 N/ (3 mm x 20 mm) à 70 N/ (3 mm x 20 mm). Cette feuille adhésive 1 pour découpage en dés furtifs permet un excellent nettoyage des puces.
(JA) 少なくとも、内部に改質層が形成された半導体ウエハを室温環境下で個々のチップに切断分離するために使用されるステルスダイシング用粘着シート1であって、基材11と、基材11の一方の面側に積層された粘着剤層12とを備え、粘着剤層12を介してステルスダイシング用粘着シート1をシリコンウエハに貼付した場合における、粘着剤層12と前記シリコンウエハとの界面の23℃でのせん断力が、5N/(3mm×20mm)以上、70N/(3mm×20mm)以下であるステルスダイシング用粘着シート1。かかるステルスダイシング用粘着シート1は、チップの洗浄性に優れる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)