Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019008339) FABRICATING CORRELATED ELECTRON MATERIAL (CEM) DEVICES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/008339 International Application No.: PCT/GB2018/051862
Publication Date: 10.01.2019 International Filing Date: 03.07.2018
IPC:
H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
ARM LTD [GB/GB]; 110 Fulbourn Road Cambridge CB1 9NJ, GB
Inventors:
ARAUJO, Carlos; GB
CELINSKA, Jolanta; GB
SHIFREN, Lucian; GB
Agent:
TLIP LTD; 14 King Street Leeds LS1 2HL, GB
Priority Data:
15/641,12403.07.2017US
Title (EN) FABRICATING CORRELATED ELECTRON MATERIAL (CEM) DEVICES
(FR) FABRICATION DE DISPOSITIFS EN MATÉRIAU ÉLECTRONIQUE CORRÉLÉ (CEM)
Abstract:
(EN) Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.
(FR) L'invention peut concerner des dispositifs en matériau électronique corrélé (CEM). Dans des modes de réalisation particuliers, après la formation d'un film comprenant des couches d'un matériau d'oxyde de métal de transition (TMO) et d'un dopant, au moins une partie du film peut être exposée à une température élevée. L'exposition de ladite partie du film à la température élevée peut se poursuivre jusqu'à ce que la concentration atomique du dopant dans le film soit réduite, ce qui peut permettre le fonctionnement du film en tant que matériau électronique corrélé CEM présentant une commutation d'états d'impédance.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)