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1. (WO2019007343) METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS
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Pub. No.: WO/2019/007343 International Application No.: PCT/CN2018/094354
Publication Date: 10.01.2019 International Filing Date: 03.07.2018
IPC:
H01L 21/762 (2006.01) ,H01L 21/311 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
311
Etching the insulating layers
Applicants:
无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN/CN]; 中国江苏省无锡市 新区新洲路8号 No.8 Xinzhou Road Wuxi New District, Jiangsu 214028, CN
Inventors:
祁树坤 QI, Shukun; CN
孙贵鹏 SUN, Guipeng; CN
Agent:
广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE; 中国广东省广州市 天河区花城大道85号3901房 Room 3901, No.85 Huacheng Avenue, Tianhe District Guangzhou, Guangdong 510623, CN
Priority Data:
201710534702.103.07.2017CN
Title (EN) METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS
(FR) PROCÉDÉ DE FABRICATION DE STRUCTURE D'ISOLATION POUR LDMOS
(ZH) LDMOS的隔离结构的制造方法
Abstract:
(EN) Disclosed is a method for manufacturing an isolation structure for LDMOS, the method comprising: forming a first groove on the surface of a wafer; filling the first groove with silicon oxide; removing part of the surface of the silicon oxide within the first groove by means of etching; forming a silicon oxide corner structure at the corner of the top of the first groove by means of thermal oxidation; depositing a nitrogen-containing compound on the surface of the wafer to cover the surface of the silicon oxide within the first groove and the surface of the silicon oxide corner structure; dry-etching the nitrogen-containing compound to remove the nitrogen-containing compound from the surface of the silicon oxide within the first groove, and thereby forming a nitrogen-containing compound side wall residue; with the nitrogen-containing compound side wall residue as a mask, continuing to etch downwards to form a second groove; forming a silicon oxide layer on the side wall and the bottom of the second groove; removing the nitrogen-containing compound side wall residue; and filling the first groove and the second groove with silicon oxide.
(FR) L'invention concerne un procédé de fabrication d'une structure d'isolation pour LDMOS, le procédé comprenant : la formation d'une première rainure sur la surface d'une tranche ; le remplissage de la première rainure avec de l'oxyde de silicium ; le retrait d'une partie de la surface de l'oxyde de silicium à l'intérieur de la première rainure au moyen d'une gravure ; la formation d'une structure de coin d'oxyde de silicium au niveau du coin du sommet de la première rainure au moyen d'une oxydation thermique ; le dépôt d'un composé contenant de l'azote sur la surface de la tranche pour recouvrir la surface de l'oxyde de silicium à l'intérieur de la première rainure et de la surface de la structure de coin d'oxyde de silicium ; la gravure à sec du composé contenant de l'azote pour retirer le composé contenant de l'azote de la surface de l'oxyde de silicium à l'intérieur de la première rainure, et par conséquent la formation d'un résidu de paroi latérale de composé contenant de l'azote ; avec le résidu de paroi latérale de composé contenant de l'azote en tant que masque, la continuation de la gravure vers le bas pour former une seconde rainure ; la formation d'une couche d'oxyde de silicium sur la paroi latérale et le fond de la seconde rainure ; le retrait du résidu de paroi latérale de composé contenant de l'azote ; et le remplissage de la première rainure et de la seconde rainure avec de l'oxyde de silicium.
(ZH) 一种LDMOS的隔离结构的制造方法,包括:在晶圆表面形成第一沟槽;向第一沟槽内填充氧化硅;通过刻蚀去除掉第一沟槽内的氧化硅表面的一部分;通过热氧化在第一沟槽顶部的拐角处形成氧化硅拐角结构;在晶圆表面淀积含氮化合物,覆盖第一沟槽内的氧化硅表面及氧化硅拐角结构表面;干法刻蚀含氮化合物,将第一沟槽内的氧化硅表面的含氮化合物去除,形成含氮化合物侧壁残留;以含氮化合物侧壁残留为掩膜,继续向下刻蚀形成第二沟槽;在第二沟槽的侧壁和底部形成氧化硅层;去除含氮化合物侧壁残留;向第一沟槽和第二沟槽内填充氧化硅。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)