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1. (WO2019007189) SINGLE-SIDED POLO CELL AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2019/007189 International Application No.: PCT/CN2018/090561
Publication Date: 10.01.2019 International Filing Date: 11.06.2018
IPC:
H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
常州亿晶光电科技有限公司 EGING PHOTOVOLTAIC TECHNOLOGY CO., LTD [CN/CN]; 中国江苏省常州市 金坛区尧塘镇金武路18号 18' Jinwu Road, Yaotang Town, Jintan District Changzhou, Jiangsu 213213, CN
Inventors:
刘阳 LIU, Yang; CN
孙铁囤 SUN, Tietun; CN
姚伟忠 YAO, Weizhong; CN
Agent:
常州市英诺创信专利代理事务所(普通合伙) CHANGZHOU INNOVATION PATENT AGENCY FIRM (GENERAL PARTNER); 中国江苏省常州市 武进区湖塘镇人民中路151号2号楼4楼朱丽莎 ZHU, Lisha F4, Building 2 NO.151 Middle Renmin Road, Hutang, Wujin Changzhou, Jiangsu 213161, CN
Priority Data:
201710549206.307.07.2017CN
Title (EN) SINGLE-SIDED POLO CELL AND MANUFACTURING METHOD THEREOF
(FR) CELLULE POLO À UNE SEULE FACE ET SON PROCÉDÉ DE FABRICATION
(ZH) 单面POLO电池及其制备方法
Abstract:
(EN) The present invention relates to the field of solar cell manufacturing technology, and more particularly to a single-sided POLO cell and a manufacturing method thereof. A silicon oxide plus polycrystalline silicon layer is used for backside passivation. The effects include firstly, surface defects on the back side are passivated, weak light responsiveness is enhanced, contacts between the metal and the semiconductor on the back side are also passivated, and the negative charge value of contacts is reduced; secondly, no transverse transmission of minority or majority carriers is present in a substrate region due to the complete passivation and the lack of point contacts; and thirdly, the polycrystalline silicon has an indirect bandgap so current loss is minimal.
(FR) La présente invention se rapporte au domaine de la technologie de fabrication de cellules solaires, et concerne plus particulièrement une cellule POLO à une seule face et son procédé de fabrication. Une couche de silicium polycristalline plus d'oxyde de silicium est utilisée pour une passivation de face arrière. Les effets comprennent, premièrement, une passivation des défauts de surface sur la face arrière, l'amélioration de la réactivité à la lumière faible, la passivation également des contacts entre le métal et le semi-conducteur sur la face arrière, et la réduction de la valeur de charge négative des contacts ; deuxièmement, aucune transmission transversale de porteurs minoritaires ou majoritaires n'est présente dans une région de substrat en raison de la passivation complète et du manque de contacts ponctuels ; et troisièmement, le silicium polycristallin a une bande interdite indirecte de sorte à réduire au minimum la perte de courant.
(ZH) 本发明涉及太阳能电池制备技术领域,尤其涉及一种单面POLO电池及其制备方法,利用氧化硅加多晶硅层进行背面钝化,其一作用是不仅钝化了背面的表面缺陷,增加弱光的响应,也钝化了背面的金属与半导体的接触,减少了接触负电荷值;其二是由于是全钝化,没有点接触,其基区没有少子或多子的横向传输,其三是多晶硅为间接带隙,电流损失小。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)