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1. (WO2019007188) DOUBLE-SIDED POLO CELL AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2019/007188 International Application No.: PCT/CN2018/090560
Publication Date: 10.01.2019 International Filing Date: 11.06.2018
IPC:
H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
常州亿晶光电科技有限公司 EGING PHOTOVOLTAIC TECHNOLOGY CO., LTD [CN/CN]; 中国江苏省常州市 金坛区尧塘镇金武路18号 18# Jinwu Road, Yaotang Town, Jintan District Changzhou, Jiangsu 213213, CN
Inventors:
刘阳 LIU, Yang; CN
孙铁囤 SUN, Tietun; CN
姚伟忠 YAO, Weizhong; CN
Agent:
常州市英诺创信专利代理事务所(普通合伙) CHANGZHOU INNOVATION PATENT AGENCY FIRM (GENERAL PARTNER); 中国江苏省常州市 武进区湖塘镇人民中路151号2号楼4楼朱丽莎 ZHU, Lisha F4, Building 2 No.151 Middle Renmin Road, Hutang, Wujin Changzhou, Jiangsu 213161, CN
Priority Data:
201710549208.207.07.2017CN
Title (EN) DOUBLE-SIDED POLO CELL AND MANUFACTURING METHOD THEREOF
(FR) CELLULE POLO DOUBLE FACE ET SON PROCÉDÉ DE FABRICATION
(ZH) 双面POLO电池及其制备方法
Abstract:
(EN) The present invention relates to the field of solar cell manufacturing technology and more particularly to a double-sided POLO cell and manufacturing method thereof, wherein a silicon oxide plus polycrystalline silicon layer is used for both frontside and backside passivation. The effects achieved by the invention include passivation of surface defects of the silicon chip, enhanced weak light responsiveness, passivation of contacts between the metal and the semiconductor on the back side, and reduction of the negative charge value of the contacts; a further effect achieved is that due to the complete passivation and the absence of contact points, there is no horizontal transmission of minority or majority carriers in the substrate region thereof. Lastly, since the polycrystalline silicon has an indirect band gap there is minimal current loss.
(FR) La présente invention concerne le domaine de la technologie de fabrication de cellules solaires, et concerne plus particulièrement une cellule POLO à double face et son procédé de fabrication, une couche de silicium polycristallin plus oxyde de silicium étant utilisée pour la passivation avant et arrière. Les effets obtenus par l'invention comprennent la passivation de défauts de surface de la puce de silicium, une réactivité à la lumière faible améliorée, une passivation des contacts entre le métal et le semi-conducteur sur le côté arrière, et la réduction de la valeur de charge négative des contacts ; un autre effet obtenu consiste en ce que, en raison de la passivation complète et de l'absence de points de contact, il n'y a pas de transmission horizontale de porteurs minoritaires ou majoritaires dans la région de substrat associée. Enfin, étant donné que le silicium polycristallin a une bande interdite indirecte, la perte de courant est minimale.
(ZH) 本发明涉及太阳能电池制备技术领域,尤其涉及一种双面POLO电池及其制备方法,利用氧化硅加多晶硅层进行双面钝化,其作用一是不仅钝化了硅片表面的表面缺陷,增加弱光的响应,也钝化了背面的金属与半导体的接触,减少了接触负电荷值;其二是由于是全钝化,没有点接触,其基区没有少子或多子的横向传输,其三是多晶硅为间接带隙,电流损失小。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)