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1. (WO2019006820) METHOD FOR DRIVING PIXEL CIRCUIT
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Pub. No.: WO/2019/006820 International Application No.: PCT/CN2017/097038
Publication Date: 10.01.2019 International Filing Date: 11.08.2017
IPC:
G09G 3/3225 (2016.01)
[IPC code unknown for G09G 3/3225]
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Road, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
曾玉超 ZENG, Yuchao; CN
梁鹏飞 LIANG, Pengfei; CN
Agent:
北京聿宏知识产权代理有限公司 YUHONG INTELLECTUAL PROPERTY LAW FIRM; 中国北京市 西城区宣武门外大街6号庄胜广场第一座西翼713室吴大建/陈伟 WU Dajian/CHEN Wei West Wing, Suite 713, One Junefield Plaza, 6 Xuanwumenwai Street, Xicheng District Beijing 100052, CN
Priority Data:
201710545849.006.07.2017CN
Title (EN) METHOD FOR DRIVING PIXEL CIRCUIT
(FR) PROCÉDÉ D'ATTAQUE DE CIRCUIT DE PIXELS
(ZH) 一种用于驱动像素电路的方法
Abstract:
(EN) A method for driving a pixel circuit, comprising: obtaining actual threshold voltage (Vth) and actual current-voltage conversion coefficient (k) of a drive thin film transistor (T22), and actual light emitting efficiency (η) of an organic light emitting diode (OLED) in sequence (S110); and calculating a compensation data signal input to a source electrode of a switch thin film transistor (T21) according to the obtained actual threshold voltage (Vth) and actual current-voltage conversion coefficient (k) of the drive thin film transistor (T22), and the actual light emitting efficiency (η) of the organic light emitting diode (OLED) (S120).
(FR) L'invention concerne un procédé d'attaque d'un circuit de pixels, consistant : à obtenir en séquence une tension de seuil (Vth) réelle et un coefficient de conversion courant-tension (k) réel d'un transistor à film mince d'attaque (T22), et une efficacité électroluminescente réelle (η) d'une diode électroluminescente organique (OLED) (S110) ; et à calculer un signal de données de compensation appliqué à l'entrée d'une électrode de source d'un transistor à film mince de commutation (T21) en fonction de la tension de seuil (Vth) réelle obtenue et du coefficient de conversion courant-tension (k) réel du transistor à film mince d'attaque (T22), et de l'efficacité électroluminescente réelle (η) de la diode électroluminescente organique (OLED) (S120).
(ZH) 一种用于驱动像素电路的方法,包括:依次获得驱动薄膜晶体管(T22)的实际阈值电压(Vth)和实际电流电压转换系数(k)、有机发光二极管(OLED)的实际发光效率(η)(S110);根据获得的驱动薄膜晶体管(T22)的实际阈值电压(Vth)和实际电流电压转换系数(k)、有机发光二极管(OLED)的实际发光效率(η),计算输入至开关薄膜晶体管(T21)的源极的补偿数据信号(S120)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)