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1. (WO2019005909) VOLTAGE TUNABLE SOLAR-BLIND ULTRAVIOLET BIPOLAR JUNCTION PHOTOTRANSISTOR HAVING AN EPITAXIAL GRAPHENE / SIC SCHOTTKY CONTACT
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Pub. No.: WO/2019/005909 International Application No.: PCT/US2018/039673
Publication Date: 03.01.2019 International Filing Date: 27.06.2018
IPC:
H01L 31/11 (2006.01) ,H01L 31/0312 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 29/66 (2006.01) ,C01B 32/188 (2017.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
11
characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0312
including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
[IPC code unknown for C01B 32/188]
Applicants:
UNIVERSITY OF SOUTH CAROLINA [US/US]; Suite 109 Osborne Administration Building Columbia, South Carolina 29208, US
Inventors:
CHAVA, Venkata Surya N.; US
CHANDRASHEKHAR, Mvs; US
BALACHANDRAN, Anusha; US
Agent:
LINEBERRY, Douglas L.; US
THORSON, Chad L.; US
JOHNSON, III, John E.; US
QUIRK, Nathaniel T.; US
Priority Data:
62/525,25927.06.2017US
Title (EN) VOLTAGE TUNABLE SOLAR-BLIND ULTRAVIOLET BIPOLAR JUNCTION PHOTOTRANSISTOR HAVING AN EPITAXIAL GRAPHENE / SIC SCHOTTKY CONTACT
(FR) PHOTOTRANSISTOR À JONCTION BIPOLAIRE ULTRAVIOLET INSENSIBLE AU SOLEIL ACCORDABLE EN TENSION AYANT UN CONTACT SCHOTTKY EN GRAPHÈNE/SIC ÉPITAXIAL
Abstract:
(EN) A solar-blind UV detector having voltage tunable wavelength selectivity is disclosed. The detector comprises a Schottky emitter bipolar phototransistor having an epitaxial graphene (EG) top electrode layer (102) grown on a p-SiC epi-layer (104) by selective etching of Si from the SiC using a Tetrafluorosilane (TFS) gas precursor. The Schottky emitter is formed by a heterojunction between the epitaxial graphene top electrode layer (102) and the p- SiC epi-layer (104).
(FR) L'invention concerne un détecteur UV insensible au soleil ayant une sélectivité de longueur d'onde accordable en tension. Le détecteur comprend un phototransistor bipolaire à émetteur Schottky ayant une couche d'électrode supérieure en graphène épitaxiale (EG) (102) développée sur une couche épitaxiale p-SiC (104) par gravure sélective de Si à partir du SiC à l'aide d'un précurseur de gaz tétrafluorosilane (TFS). L'émetteur Schottky est formé par une hétérojonction entre la couche d'électrode supérieure en graphène épitaxiale (102) et la couche épitaxiale p-SiC (104).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)