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1. (WO2019005878) SELF-FORMING BARRIER PROCESS
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Pub. No.: WO/2019/005878 International Application No.: PCT/US2018/039610
Publication Date: 03.01.2019 International Filing Date: 26.06.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94538, US
Inventors:
JOI, Aniruddha; US
DORDI, Yezdi; US
Agent:
LEE, David, F.; US
Priority Data:
15/635,11727.06.2017US
Title (EN) SELF-FORMING BARRIER PROCESS
(FR) PROCESSUS POUR BARRIÈRE À FORMATION AUTOMATIQUE
Abstract:
(EN) A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.
(FR) Cette invention concerne un procédé, comprenant les opérations suivantes : la réalisation d'un processus de dépôt sur un substrat, le processus de dépôt étant configuré pour déposer une couche de cuivre dans un élément sur le substrat, la couche de cuivre étant dopée avec du zinc à un pourcentage atomique inférieur à environ 30 pour cent ; après le dépôt de la couche de cuivre, le recuit du substrat, le recuit étant configuré pour provoquer la migration du zinc vers une interface de la couche de cuivre et d'une couche d'oxyde du substrat, la migration du zinc produisant une barrière adhésive à l'interface qui inhibe l'électro-migration de la couche de cuivre.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)