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1. (WO2019005164) PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (pSTTM) DEVICES WITH ENHANCED STABILITY AND LOW DAMPING AND METHODS TO FORM THE SAME
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Pub. No.: WO/2019/005164 International Application No.: PCT/US2017/040507
Publication Date: 03.01.2019 International Filing Date: 30.06.2017
IPC:
H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
OGUZ, Kaan [TR/US]; US
O'BRIEN, Kevin P. [US/US]; US
KUO, Charles C. [US/US]; US
DOYLE, Brian S. [IE/US]; US
DOCZY, Mark L. [US/US]; US
WIEGAND, Christopher J. [US/US]; US
RAHMAN, Tofizur [BD/US]; US
OUELLETTE, Daniel G. [US/US]; US
BROCKMAN, Justin S. [US/US]; US
GHANI, Tahir [US/US]; US
GOLONZKA, Oleg [US/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
OGUZ, Kaan; US
O'BRIEN, Kevin P.; US
KUO, Charles C.; US
DOYLE, Brian S.; US
DOCZY, Mark L.; US
WIEGAND, Christopher J.; US
RAHMAN, Tofizur; US
OUELLETTE, Daniel G.; US
BROCKMAN, Justin S.; US
GHANI, Tahir; US
GOLONZKA, Oleg; US
Agent:
BRASK, Justin, K.; US
Priority Data:
Title (EN) PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (pSTTM) DEVICES WITH ENHANCED STABILITY AND LOW DAMPING AND METHODS TO FORM THE SAME
(FR) DISPOSITIFS DE MÉMOIRE DE COUPLE DE TRANSFERT DE SPIN PERPENDICULAIRE (PSTTM) À STABILITÉ AMÉLIORÉE ET AMORTISSEMENT FAIBLE ET LEURS PROCÉDÉS DE FORMATION
Abstract:
(EN) A memory device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier. One of the free magnet or the fixed magnet includes a magnetic alloy consisting of iron and boron, and one or more elements selected from the group consisting of Si, Ge, Al, Hf, W, Ru, Ir, Ta, Cr and Mo where the total amount of the one or more elements is less than or equal to 10 atomic percent of the total composition of the magnetic alloy. A memory device further includes an oxide layer on the free magnet, a follower magnetic layer on the oxide layer and a top electrode above the follower magnetic layer.
(FR) La présente invention concerne un dispositif de mémoire comprenant une électrode inférieure, un aimant fixe au-dessus de l'électrode inférieure, une barrière tunnel sur l'aimant fixe, un aimant libre sur la barrière tunnel. Un aimant choisi parmi l'aimant libre ou l'aimant fixe comprend un alliage magnétique constitué de fer et de bore, et un ou plusieurs éléments choisis dans le groupe constitué par Si, Ge, Al, Hf, W, Ru, Ir, Ta, Cr et Mo, la quantité totale du ou des éléments étant inférieure ou égale à 10 pour cent atomique de la composition totale de l'alliage magnétique. Un dispositif de mémoire comprend en outre une couche d'oxyde sur l'aimant libre, une couche magnétique suiveuse sur la couche d'oxyde et une électrode supérieure au-dessus de la couche magnétique suiveuse.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)