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1. (WO2019005157) PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED STABILITY AND HIGH TUNNELING MAGNETORESISTANCE RATIO AND METHODS TO FORM THE SAME
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Pub. No.: WO/2019/005157 International Application No.: PCT/US2017/040496
Publication Date: 03.01.2019 International Filing Date: 30.06.2017
IPC:
H01L 43/10 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
WIEGAND, Christopher J. [US/US]; US
RAHMAN, Tofizur [BD/US]; US
OUELLETTE, Daniel G. [US/US]; US
SMITH, Angeline K. [US/US]; US
BROCKMAN, Justin S. [US/US]; US
O'BRIEN, Kevin P. [US/US]; US
OGUZ, Kaan [TR/US]; US
DOCZY, Mark L. [US/US]; US
DOYLE, Brian S. [IE/US]; US
GOLONZKA, Oleg [US/US]; US
ALZATE VINASCO, Juan G. [CO/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
WIEGAND, Christopher J.; US
RAHMAN, Tofizur; US
OUELLETTE, Daniel G.; US
SMITH, Angeline K.; US
BROCKMAN, Justin S.; US
O'BRIEN, Kevin P.; US
OGUZ, Kaan; US
DOCZY, Mark L.; US
DOYLE, Brian S.; US
GOLONZKA, Oleg; US
ALZATE VINASCO, Juan G.; US
Agent:
BRASK, Justin, K.; US
Priority Data:
Title (EN) PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED STABILITY AND HIGH TUNNELING MAGNETORESISTANCE RATIO AND METHODS TO FORM THE SAME
(FR) DISPOSITIFS DE MÉMOIRE DE COUPLE DE TRANSFERT DE SPIN PERPENDICULAIRE (PSTTM) À STABILITÉ AMÉLIORÉE ET À TAUX DE MAGNÉTORÉSISTANCE ÉLEVÉE À EFFET TUNNEL, ET LEURS PROCÉDÉS DE FORMATION
Abstract:
(EN) A memory device includes a bottom electrode disposed above a substrate, a fixed magnet disposed above the bottom electrode, a tunnel barrier including a magnesium oxide disposed on the fixed magnet, a free magnet on the tunnel barrier, a cap oxide layer disposed on the free magnet, a follower magnet disposed on the oxide layer and a metallic cap disposed on the follower magnet. The metallic cap includes a metal such as Hf, W and Ta and further includes a trace amounts of an inert gas. One or more conductive nano-channels extend from the metallic cap through the free magnet and into the oxide layer, where each of the one or more conductive nano-channels include the material of the metallic cap. The memory device further includes an etch stop layer disposed on the metallic cap and a top electrode disposed on the etch stop layer.
(FR) L'invention concerne un dispositif de mémoire qui comprend une électrode inférieure, disposée au-dessus d'un substrat, un aimant fixe, disposé au-dessus de l'électrode inférieure, une barrière tunnel, comprenant un oxyde de magnésium disposé sur l'aimant fixe, un aimant libre sur la barrière tunnel, une couche d'oxyde de couverture, disposée sur l'aimant libre, un aimant suiveur, disposé sur la couche d'oxyde et un capuchon métallique, disposé sur l'aimant suiveur. Le capuchon métallique comprend un métal tel que Hf, W et Ta et comprend en outre des quantités à l'état de trace d'un gaz inerte. Un ou plusieurs nanocanaux conducteurs s'étendent à partir du capuchon métallique à travers l'aimant libre et dans la couche d'oxyde, chacun du ou des nanocanaux conducteurs comprenant le matériau du capuchon métallique. Le dispositif de mémoire comprend en outre une couche d'arrêt de gravure, disposée sur le capuchon métallique, et une électrode supérieure, disposée sur la couche d'arrêt de gravure.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)