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1. (WO2019005147) PERPENDICULAR MAGNET ANISOTROPY BASED SPIN HALL MEMORY USING SPIN ORBIT EFFECT AND EXCHANGE BIAS
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Pub. No.: WO/2019/005147 International Application No.: PCT/US2017/040473
Publication Date: 03.01.2019 International Filing Date: 30.06.2017
IPC:
G11C 11/16 (2006.01) ,H01L 43/08 (2006.01) ,H01L 27/22 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22
including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
MANIPATRUNI, Sasikanth; US
NIKONOV, Dmitri; US
YOUNG, Ian; US
Agent:
MUGHAL, Usman; US
Priority Data:
Title (EN) PERPENDICULAR MAGNET ANISOTROPY BASED SPIN HALL MEMORY USING SPIN ORBIT EFFECT AND EXCHANGE BIAS
(FR) MÉMOIRE À EFFET HALL DE SPIN À BASE D'ANISOTROPIE À AIMANT PERPENDICULAIRE, UTILISANT L'EFFET SPIN-ORBITE ET LE CHAMP D'ÉCHANGE
Abstract:
(EN) An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and an interconnect including an anti-ferromagnetic (AFM) material to generate an exchange coupling field along the plane of the device, wherein the interconnect is adjacent to the free magnet layer.
(FR) L'invention concerne un appareil qui comprend : une jonction magnétique possédant une couche d'aimant libre qui présente une anisotropie magnétique perpendiculaire (AMP), la couche d'aimant libre comportant un axe perpendiculaire à un plan d'un dispositif ; et une interconnexion comportant un matériau antiferromagnétique (AFM) pour générer un champ de couplage d'échange le long du plan du dispositif, l'interconnexion étant adjacente à la couche d'aimant libre.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)