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1. (WO2019005127) MAGNETIC TUNNELING JUNCTION DEVICE WITH NANO-CONTACT TO FREE LAYER
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Pub. No.: WO/2019/005127 International Application No.: PCT/US2017/040403
Publication Date: 03.01.2019 International Filing Date: 30.06.2017
IPC:
H01L 43/02 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
KUO, Charles C.; US
ATANASOV, Sarah; US
DOCZY, Mark L.; US
OGUZ, Kaan; US
O'BRIEN, Kevin P.; US
Agent:
HOWARD, James; US
Priority Data:
Title (EN) MAGNETIC TUNNELING JUNCTION DEVICE WITH NANO-CONTACT TO FREE LAYER
(FR) DISPOSITIF DE JONCTION À EFFET TUNNEL MAGNÉTIQUE AVEC NANO-CONTACT À UNE COUCHE LIBRE
Abstract:
(EN) MTJ material stacks including one or more nano-contact, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. Nano-contacts having lateral dimensions smaller than the lateral dimensions of a free magnet layer may convey a high current density into the free magnetic layer at their point(s) of contact during device operation. With such an architecture lower write currents and/or reduced switching times may be achieved for an MTJ device having a given free magnet area (footprint). A nano-contact may be fabricated as a conductive spacer self-aligned with a sidewall of topography created in a dielectric layer.
(FR) La présente invention concerne des empilements de matériaux MTJ comprenant un ou plusieurs nano-contacts, des dispositifs MTJ qui utilisent de tels empilements, et des plateformes informatiques qui utilisent de tels dispositifs MTJ. Des nano-contacts ayant des dimensions latérales plus petites que les dimensions latérales d'une couche d'aimant libre peuvent transporter une densité de courant élevée dans la couche magnétique libre à leur point ou leurs points de contact pendant le fonctionnement du dispositif. Avec une telle architecture, des courants d'écriture plus bas et/ou des temps de commutation réduits peuvent être obtenus pour un dispositif MTJ qui comporte une zone d'aimant libre donnée (empreinte). Un nano-contact peut être fabriqué sous forme d'élément d'espacement conducteur auto-aligné avec une paroi latérale de topographie créée dans une couche diélectrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)