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1. (WO2019004390) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
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Pub. No.: WO/2019/004390 International Application No.: PCT/JP2018/024699
Publication Date: 03.01.2019 International Filing Date: 28.06.2018
IPC:
H01L 21/304 (2006.01) ,H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る四丁目天神北町1番地の1 1-1, Tenjinkita-machi, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
岩尾 通矩 IWAO, Michinori; JP
安田 周一 YASUDA, Shuichi; JP
藤田 和宏 FUJITA, Kazuhiro; JP
菊本 憲幸 KIKUMOTO, Noriyuki; JP
山口 貴大 YAMAGUCHI, Takahiro; JP
Agent:
特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS; 大阪府大阪市中央区南本町二丁目6番12号 サンマリオンNBFタワー21階 Sun Mullion NBF Tower, 21st Floor, 6-12, Minamihommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410054, JP
Priority Data:
2017-12953930.06.2017JP
2018-11492215.06.2018JP
2018-11492315.06.2018JP
Title (EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) This substrate processing device includes: a suctioning unit for suctioning a processing solution present inside a processing solution pipe communicating with a discharge port; and a control device. The control device performs a suctioning process for suctioning the processing solution present inside the processing solution pipe by means of the suctioning unit. In addition, in the suctioning step, the control device selectively performs: a first suctioning step for retreating the leading end face of the processing solution and disposing the leading end face of the suctioned processing solution at a predetermined waiting position inside the processing solution pipe; and a second suctioning step for retreating the leading end face of the processing solution further than the waiting position. In addition, after the second suctioning step, the control device further performs a waiting position disposing step for supplying the processing solution to the processing solution pipe by means of the processing solution supply unit and disposing the leading end face of the processing solution at the waiting position.
(FR) La présente invention concerne un dispositif de traitement de substrat qui comprend : une unité d'aspiration pour aspirer une solution de traitement présente à l'intérieur d'un tuyau de solution de traitement qui communique avec un orifice d'évacuation ; et un dispositif de commande. Le dispositif de commande effectue un processus d'aspiration pour aspirer la solution de traitement présente à l'intérieur du tuyau de solution de traitement au moyen de l'unité d'aspiration. En outre, dans l'étape d'aspiration, le dispositif de commande effectue sélectivement : une première étape d'aspiration pour reculer la face d'extrémité avant de la solution de traitement et disposer la face d'extrémité avant de la solution de traitement aspirée à une position d'attente prédéterminée à l'intérieur du tuyau de solution de traitement ; et une seconde étape d'aspiration pour reculer la face d'extrémité avant de la solution de traitement plus loin que la position d'attente. De plus, après la seconde étape d'aspiration, le dispositif de commande effectue en outre une étape de disposition de position d'attente pour fournir la solution de traitement au tuyau de solution de traitement au moyen de l'unité d'alimentation en solution de traitement et disposer la face d'extrémité avant de la solution de traitement dans la position d'attente.
(JA) 基板処理装置は、吐出口に連通する処理液配管の内部に存在している処理液を吸引するための吸引ユニットと、制御装置とを含む。前記制御装置が、前記吸引ユニットにより、前記処理液配管の内部に存在している処理液を吸引する吸引工程を実行する。また、前記制御装置が、前記吸引工程において、処理液の先端面を後退させて、吸引後の処理液の先端面を、前記処理液配管の内部における予め定める待機位置に配置させる第1の吸引工程と、処理液の先端面を前記待機位置よりも後退させる第2の吸引工程とを選択的に実行する。また、前記制御装置が、前記第2の吸引工程の後に、前記処理液供給ユニットにより前記処理液配管に処理液を供給して、処理液の先端面を前記待機位置に配置する待機位置配置工程をさらに実行する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)