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1. (WO2019004187) PLASMA TREATMENT DEVICE
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Pub. No.: WO/2019/004187 International Application No.: PCT/JP2018/024149
Publication Date: 03.01.2019 International Filing Date: 26.06.2018
IPC:
H05H 1/46 (2006.01) ,B01J 19/08 (2006.01) ,C23C 14/34 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19
Chemical, physical, or physico-chemical processes in general; Their relevant apparatus
08
Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP/JP]; 神奈川県川崎市麻生区栗木2-5-1 2-5-1, Kurigi, Asao-ku, Kawasaki-shi, Kanagawa 2158550, JP
Inventors:
田名部 正治 TANABE, Masaharu; JP
関谷 一成 SEKIYA, Kazunari; JP
井上 忠 INOUE, Tadashi; JP
笹本 浩 SASAMOTO, Hiroshi; JP
佐藤 辰憲 SATO, Tatsunori; JP
土屋 信昭 TSUCHIYA, Nobuaki; JP
竹田 敦 TAKEDA, Atsushi; JP
Agent:
大塚 康徳 OHTSUKA, Yasunori; JP
大塚 康弘 OHTSUKA, Yasuhiro; JP
高柳 司郎 TAKAYANAGI, Jiro; JP
木村 秀二 KIMURA, Shuji; JP
Priority Data:
2018-01755302.02.2018JP
PCT/JP2017/02360327.06.2017JP
PCT/JP2017/02361127.06.2017JP
Title (EN) PLASMA TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) A plasma treatment device, comprising: a balun that has a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode that is electrically connected to the first balanced terminal; a second electrode that is electrically connected to the second balanced terminal; an adjustment reactance imparting an effect on the relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode; and a high-frequency power supply that generates a high frequency supplied to between the first unbalanced terminal and the second unbalanced terminal. With the high-frequency power supply, the frequency of the high frequency can be changed, and the relationship is adjusted by the change in frequency.
(FR) La présente invention concerne un dispositif de traitement au plasma, comprenant : un symétriseur qui a une première borne non équilibrée, une seconde borne non équilibrée, une première borne équilibrée et une seconde borne équilibrée ; un réservoir sous vide mis à la terre ; une première électrode qui est électriquement connectée à la première borne équilibrée ; une seconde électrode qui est électriquement connectée à la seconde borne équilibrée ; une réactance de réglage produisant un effet sur la relation entre une première tension appliquée à la première électrode et une seconde tension appliquée à la seconde électrode; et une alimentation électrique haute fréquence qui génère une haute fréquence fournie entre la première borne non équilibrée et la seconde borne non équilibrée. Au moyen de l'alimentation électrique haute fréquence, la fréquence de la haute fréquence peut être modifiée, et la relation est réglée par le changement de fréquence.
(JA) プラズマ処理装置は、第1不平衡端子、第2不平衡端子、第1平衡端子および第2平衡端子を有するバランと、接地された真空容器と、前記第1平衡端子に電気的に接続された第1電極と、前記第2平衡端子に電気的に接続された第2電極と、前記第1電極に印加される第1電圧と前記第2電極に印加される第2電圧との関係に影響を与える調整リアクタンスと、前記第1不平衡端子と前記第2不平衡端子との間に供給される高周波を発生する高周波電源と、を備え、前記高周波電源は、前記高周波の周波数を変更可能であり、前記周波数の変更によって前記関係が調整される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)