Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019004185) PLASMA PROCESSING DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/004185 International Application No.: PCT/JP2018/024147
Publication Date: 03.01.2019 International Filing Date: 26.06.2018
IPC:
H05H 1/46 (2006.01) ,B01J 19/08 (2006.01) ,C23C 14/34 (2006.01) ,C23C 14/40 (2006.01) ,H01L 21/203 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19
Chemical, physical, or physico-chemical processes in general; Their relevant apparatus
08
Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
36
Diode sputtering
40
with alternating current discharge, e.g. high-frequency discharge
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP/JP]; 神奈川県川崎市麻生区栗木2-5-1 2-5-1, Kurigi, Asao-ku, Kawasaki-shi, Kanagawa 2158550, JP
Inventors:
田名部 正治 TANABE, Masaharu; JP
関谷 一成 SEKIYA, Kazunari; JP
井上 忠 INOUE, Tadashi; JP
笹本 浩 SASAMOTO, Hiroshi; JP
佐藤 辰憲 SATO, Tatsunori; JP
土屋 信昭 TSUCHIYA, Nobuaki; JP
竹田 敦 TAKEDA, Atsushi; JP
Agent:
大塚 康徳 OHTSUKA, Yasunori; JP
大塚 康弘 OHTSUKA, Yasuhiro; JP
高柳 司郎 TAKAYANAGI, Jiro; JP
木村 秀二 KIMURA, Shuji; JP
Priority Data:
2018-01755102.02.2018JP
PCT/JP2017/02360327.06.2017JP
PCT/JP2017/02361127.06.2017JP
Title (EN) PLASMA PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) A plasma processing device, comprising: a balun that has a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode that is electrically connected to the first balanced terminal; a second electrode that is electrically connected to the second balanced terminal; an adjustment reactance that imparts an effect on the relationship of a first voltage applied to the first electrode and a second voltage applied to the second electrode; a substrate-holding unit that holds a substrate; and a drive mechanism that causes the substrate-holding unit to rotate.
(FR) La présente invention concerne un dispositif de traitement au plasma, comprenant : un symétriseur qui comporte une première borne non équilibrée, une seconde borne non équilibrée, une première borne équilibrée et une seconde borne équilibrée ; un contenant sous vide mis à la terre ; une première électrode qui est connectée électriquement à la première borne équilibrée ; une seconde électrode qui est connectée électriquement à la seconde borne équilibrée ; une réactance de réglage qui confère un effet sur la relation d'une première tension électrique appliquée à la première électrode et d'une seconde tension électrique appliquée à la seconde électrode ; une unité de maintien de substrat qui maintient un substrat ; et un mécanisme d'entraînement qui amène l'unité de maintien de substrat à tourner.
(JA) プラズマ処理装置は、第1不平衡端子、第2不平衡端子、第1平衡端子および第2平衡端子を有するバランと、接地された真空容器と、前記第1平衡端子に電気的に接続された第1電極と、前記第2平衡端子に電気的に接続された第2電極と、前記第1電極に印加される第1電圧と前記第2電極に印加される第2電圧との関係に影響を与える調整リアクタンスと、基板を保持する基板保持部と、前記基板保持部を回転させる駆動機構と、を備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)