Processing

Please wait...

Settings

Settings

Goto Application

1. WO2019004183 - PLASMA TREATMENT DEVICE

Publication Number WO/2019/004183
Publication Date 03.01.2019
International Application No. PCT/JP2018/024145
International Filing Date 26.06.2018
Chapter 2 Demand Filed 04.12.2018
IPC
H05H 1/46 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
B01J 19/08 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19Chemical, physical or physico-chemical processes in general; Their relevant apparatus
08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
C23C 14/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
B01J 19/08
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19Chemical, physical or physico-chemical processes in general; Their relevant apparatus
08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
H01J 2237/332
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
332Coating
H01J 2237/334
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
H01J 37/32183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
32183Matching circuits, impedance matching circuits per se H03H7/38 and H03H7/40
Applicants
  • キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP]/[JP]
Inventors
  • 関谷 一成 SEKIYA, Kazunari
  • 田名部 正治 TANABE, Masaharu
  • 井上 忠 INOUE, Tadashi
  • 笹本 浩 SASAMOTO, Hiroshi
  • 佐藤 辰憲 SATO, Tatsunori
  • 土屋 信昭 TSUCHIYA, Nobuaki
Agents
  • 大塚 康徳 OHTSUKA, Yasunori
  • 大塚 康弘 OHTSUKA, Yasuhiro
  • 高柳 司郎 TAKAYANAGI, Jiro
  • 木村 秀二 KIMURA, Shuji
Priority Data
2018-01754902.02.2018JP
PCT/JP2017/02360327.06.2017JP
PCT/JP2017/02361127.06.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract
(EN) A plasma treatment device, comprising: a balun that has a first input terminal, a second input terminal, a first output terminal, and a second output terminal; a vacuum container; a first electrode that is insulated from the vacuum container and is electrically connected to the first output terminal; and a second electrode that is insulated from the vacuum container and is electrically connected to the second output terminal. The second electrode is placed so as to surround the first electrode along the entire periphery.
(FR) L'invention concerne un dispositif de traitement au plasma, comprenant : un symétriseur qui a une première borne d'entrée, une seconde borne d'entrée, une première borne de sortie et une seconde borne de sortie ; un récipient sous vide ; une première électrode qui est isolée du récipient sous vide et qui est électriquement connectée à la première borne de sortie; et une seconde électrode qui est isolée du récipient sous vide et est électriquement connectée à la seconde borne de sortie. La seconde électrode est placée de manière à entourer la première électrode sur toute la périphérie.
(JA) プラズマ処理装置は、第1入力端子、第2入力端子、第1出力端子および第2出力端子を有するバランと、真空容器と、前記真空容器から絶縁され、前記第1出力端子に電気的に接続された第1電極と、前記真空容器から絶縁され、前記第2出力端子に電気的に接続された第2電極とを備え、前記第2電極は、前記第1電極を全周にわたって取り囲むように配置されている。
Latest bibliographic data on file with the International Bureau