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1. (WO2019004142) FILM-FORMING MATERIAL, LITHOGRAPHIC FILM-FORMING COMPOSITION, OPTICAL COMPONENT-FORMING MATERIAL, RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, RESIST PERMANENT FILM, RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM PRODUCTION METHOD, LITHOGRAPHIC UNDERLAYER FILM-FORMING MATERIAL, LITHOGRAPHIC UNDERLAYER FILM-FORMING COMPOSITION, LITHOGRAPHIC UNDERLAYER FILM PRODUCTION METHOD, AND CIRCUIT PATTERN FORMATION METHOD
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Pub. No.: WO/2019/004142 International Application No.: PCT/JP2018/024048
Publication Date: 03.01.2019 International Filing Date: 25.06.2018
IPC:
G03F 7/004 (2006.01) ,C07D 251/24 (2006.01) ,C09D 7/63 (2018.01) ,C09D 201/00 (2006.01) ,G03F 7/023 (2006.01) ,G03F 7/027 (2006.01) ,G03F 7/032 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/11 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/26 (2006.01) ,G03F 7/40 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
251
Heterocyclic compounds containing 1,3,5-triazine rings
02
not condensed with other rings
12
having three double bonds between ring members or between ring members and non-ring members
14
with hydrogen or carbon atoms directly attached to at least one ring carbon atom
24
to three ring carbon atoms
[IPC code unknown for C09D 7/63]
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
D
COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
201
Coating compositions based on unspecified macromolecular compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
022
Quinonediazides
023
Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032
with binders
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP/JP]; 東京都千代田区丸の内二丁目5番2号 5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008324, JP
Inventors:
三樹 泰 MIKI, Yasushi; JP
越後 雅敏 ECHIGO, Masatoshi; JP
Agent:
稲葉 良幸 INABA, Yoshiyuki; JP
大貫 敏史 ONUKI, Toshifumi; JP
内藤 和彦 NAITO, Kazuhiko; JP
Priority Data:
2017-12654328.06.2017JP
Title (EN) FILM-FORMING MATERIAL, LITHOGRAPHIC FILM-FORMING COMPOSITION, OPTICAL COMPONENT-FORMING MATERIAL, RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, RESIST PERMANENT FILM, RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM PRODUCTION METHOD, LITHOGRAPHIC UNDERLAYER FILM-FORMING MATERIAL, LITHOGRAPHIC UNDERLAYER FILM-FORMING COMPOSITION, LITHOGRAPHIC UNDERLAYER FILM PRODUCTION METHOD, AND CIRCUIT PATTERN FORMATION METHOD
(FR) MATÉRIAU DE FORMATION DE FILM, COMPOSITION DE FORMATION DE FILM LITHOGRAPHIQUE, MATÉRIAU DE FORMATION DE COMPOSANT OPTIQUE, COMPOSITION DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE, FILM PERMANENT DE RÉSERVE, COMPOSITION SENSIBLE AU RAYONNEMENT, PROCÉDÉ DE PRODUCTION DE FILM AMORPHE LITHOGRAPHIQUE, MATÉRIAU DE FORMATION DE FILM DE SOUS-COUCHE LITHOGRAPHIQUE, COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE LITHOGRAPHIQUE, PROCÉDÉ DE PRODUCTION DE FILM DE SOUS-COUCHE LITHOGRAPHIQUE, ET PROCÉDÉ DE FORMATION DE MOTIF DE CIRCUIT
(JA) 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法
Abstract:
(EN) Provided is a film-forming material that comprises a triazine-based compound represented by formula (1), that can be used in a wet process, and that is useful for forming: a lithographic film that has excellent heat resistance, resist pattern shape, etching resistance, embedding characteristics on a stepped substrate, and film flatness; and an optical component or the like that has excellent heat resistance, transparency, and refractive index.
(FR) L'invention concerne un matériau de formation de film qui comprend un composé à base de triazine représenté par la formule (1), qui peut être utilisé dans un procédé humide, et qui est utile pour former : un film lithographique qui a une excellente résistance à la chaleur, une forme de motif de réserve, une résistance à la gravure, des caractéristiques d'incorporation sur un substrat étagé, et une planéité de film ; et un composant optique ou similaire qui a une excellente résistance à la chaleur, une excellente transparence et un excellent indice de réfraction.
(JA) 湿式プロセスが適用可能であり、耐熱性とレジストパターン形状、エッチング耐性、段差基板への埋め込み特性及び膜の平坦性に優れるリソグラフィー用膜や、耐熱性、透明性及び屈折率に優れる光学部品等を形成するために有用な、下記式(1)で表されるトリアジン系化合物を含有する、膜形成材料を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)