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1. (WO2019004103) METHOD FOR PRODUCING HOLLOW STRUCTURE, AND HOLLOW STRUCTURE
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Pub. No.: WO/2019/004103 International Application No.: PCT/JP2018/023948
Publication Date: 03.01.2019 International Filing Date: 25.06.2018
IPC:
H04R 31/00 (2006.01) ,A61B 8/14 (2006.01) ,B81B 3/00 (2006.01) ,B81C 1/00 (2006.01) ,H01L 21/302 (2006.01) ,H04R 19/00 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31
Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
A HUMAN NECESSITIES
61
MEDICAL OR VETERINARY SCIENCE; HYGIENE
B
DIAGNOSIS; SURGERY; IDENTIFICATION
8
Diagnosis using ultrasonic, sonic or infrasonic waves
13
Tomography
14
Echo-tomography
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
B
MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-MECHANICAL DEVICES
3
Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
1
Manufacture or treatment of devices or systems in or on a substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19
Electrostatic transducers
Applicants:
キヤノン株式会社 CANON KABUSHIKI KAISHA [JP/JP]; 東京都大田区下丸子3丁目30番2号 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP
Inventors:
角田 隆行 SUMIDA Takayuki; JP
丸山 綾子 MARUYAMA Ayako; JP
秋山 貴弘 AKIYAMA Takahiro; JP
▼瀬▲戸本 豊 SETOMOTO Yutaka; JP
Agent:
阿部 琢磨 ABE Takuma; JP
黒岩 創吾 KUROIWA Sogo; JP
Priority Data:
2017-12935130.06.2017JP
Title (EN) METHOD FOR PRODUCING HOLLOW STRUCTURE, AND HOLLOW STRUCTURE
(FR) PROCÉDÉ DE PRODUCTION D'UNE STRUCTURE CREUSE ET STRUCTURE CREUSE
(JA) 中空構造体の製造方法、及び中空構造体
Abstract:
(EN) This method for producing a hollow structure comprises: a step for forming a sacrificial layer on a first film; a step for forming a second film on the sacrificial layer; a step for forming an etching opening that penetrates through at least one of the first film and the second film so as to be in communication with the sacrificial layer; and a step for forming a hollow part by etching the sacrificial layer by means of a gas that contains a fluorine-containing gas and hydrogen via the etching opening. With respect to this method for producing a hollow structure, the composition ratio of silicon to nitrogen in a first region which contains a surface that is in contact with the sacrificial layer is higher than the composition ratio of silicon to nitrogen in a second region which does not contain the first region.
(FR) Le présent procédé de production d'une structure creuse comprend : une étape de formation d'une couche sacrificielle sur un premier film ; une étape de formation d'un second film sur la couche sacrificielle ; une étape de formation d'une ouverture d'attaque qui pénètre à travers au moins l'un parmi le premier film et le second film de façon à être en communication avec la couche sacrificielle ; et une étape de formation d'une partie creuse par l'attaque de la couche sacrificielle au moyen d'un gaz qui contient de l'hydrogène ainsi que du gaz contenant du fluor par l'intermédiaire de l'ouverture d'attaque. Par rapport à ce procédé de production d'une structure creuse, le rapport de composition de silicium sur azote dans une première région qui contient une surface en contact avec la couche sacrificielle est supérieur au rapport de composition de silicium sur azote dans une seconde région qui ne contient pas la première région.
(JA) 第1の膜の上に犠牲層を形成する工程と、犠牲層の上に第2の膜を形成する工程と、第1の膜及び第2の膜の少なくともいずれか一方を貫通して犠牲層に連通するエッチング開口部を形成する工程と、犠牲層を、エッチング開口部を介して、フッ素含有ガスと水素とを含むガスによってエッチングすることで中空部を形成する工程とを有し、犠牲層と接する面を含む第一の領域における窒素に対するシリコンの組成比が、第一の領域を含まない第二の領域における窒素に対するシリコンの組成比よりも大きい。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)