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1. (WO2019004056) ELECTROLESS PLATING PROCESS
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Pub. No.: WO/2019/004056 International Application No.: PCT/JP2018/023630
Publication Date: 03.01.2019 International Filing Date: 21.06.2018
IPC:
C23C 18/52 (2006.01) ,C23C 18/34 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/288 (2006.01) ,H01L 21/3205 (2006.01) ,H01L 21/768 (2006.01) ,H01L 23/522 (2006.01) ,H01L 23/532 (2006.01) ,H05K 3/18 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
52
using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32-C23C18/50152
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
31
Coating with metals
32
Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals
34
using reducing agents
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
288
from a liquid, e.g. electrolytic deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
10
in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
18
using precipitation techniques to apply the conductive material
Applicants:
小島化学薬品株式会社 KOJIMA CHEMICALS CO., LTD. [JP/JP]; 埼玉県狭山市柏原337番地26 337-26 Kashiwabara, Sayama-shi, Saitama 3501335, JP
Inventors:
加藤 友人 KATO, Tomohito; JP
渡邊 秀人 WATANABE, Hideto; JP
Agent:
吉村 勝博 YOSHIMURA, Katsuhiro; JP
Priority Data:
2017-12605228.06.2017JP
Title (EN) ELECTROLESS PLATING PROCESS
(FR) PROCÉDÉ DE DÉPÔT AUTOCATALYTIQUE
(JA) 無電解めっきプロセス
Abstract:
(EN) The purpose of the present invention is to provide an electroless plating process which is capable of obtaining a film equipped with excellent mounting properties and capable of making the thickness of the nickel plating film thin when a nickel plating film and a gold plating film are formed in this order on the surface of a copper material. This electroless plating process for forming a nickel plating film and a gold plating film in this order on the surface of a copper material by using an electroless plating method is characterized by being provided with a step for forming a nickel plating film on the surface of a copper material by using an electroless strike plating method, and a step for forming a gold plating film by using a reduction-type electroless plating method.
(FR) La présente invention concerne un procédé de dépôt autocatalytique permettant l’obtention d’un film doté d'excellentes propriétés de montage et apte à rendre fine l'épaisseur du film de nickelage lorsqu'un film de nickelage et un film de dorure sont formés, dans cet ordre, sur la surface d'un matériau de cuivre. Ce procédé de dépôt autocatalytique destiné à former un film de nickelage et un film de dorure, dans cet ordre, sur la surface d'un matériau de cuivre à l'aide d'un procédé de dépôt autocatalytique est caractérisé en ce qu'il comprend une étape de formation d'un film de nickelage sur la surface d'un matériau de cuivre à l'aide d'un procédé de dépôt autocatalytique amorcé, et une étape de formation d'un film de dorure à l’aide d'un procédé de dépôt autocatalytique de type à réduction.
(JA) 銅材の表面にニッケルめっき皮膜と金めっき皮膜とを順に成膜するときに、ニッケルめっき皮膜の膜厚を薄くすることができ、且つ、優れた実装特性を備えた皮膜を得ることができる無電解めっきプロセスを提供することを目的とする。上記課題を解決するために、無電解めっき法によって銅材の表面にニッケルめっき皮膜と金めっき皮膜とを順に成膜する無電解めっきプロセスであって、無電解ストライクめっき法によって銅材の表面にニッケルめっき皮膜を成膜する工程と、還元型無電解めっき法によって金めっき皮膜を成膜する工程とを備えることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)