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1. (WO2019003718) POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
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Pub. No.: WO/2019/003718 International Application No.: PCT/JP2018/019581
Publication Date: 03.01.2019 International Filing Date: 22.05.2018
IPC:
H02M 7/48 (2007.01) ,H01L 23/36 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
露野 円丈 TSUYUNO Nobutake; JP
島津 ひろみ SHIMAZU Hiromi; JP
難波 明博 NAMBA Akihiro; JP
松下 晃 MATSUSHITA Akira; JP
宝藏寺 裕之 HOUZOUJI Hiroshi; JP
西原 淳夫 NISHIHARA Atsuo; JP
石井 利昭 ISHII Toshiaki; JP
平尾 高志 HIRAO Takashi; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2017-12820830.06.2017JP
Title (EN) POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR D’ÉNERGIE ET DISPOSITIF DE CONVERSION D’ÉNERGIE L'UTILISANT
(JA) パワー半導体装置及びそれを用いた電力変換装置
Abstract:
(EN) The purpose of the present invention is to improve productivity while ensuring reliability of a power semiconductor device. The present invention is characterized by being provided with: a circuit body configured by including a semiconductor element and a conductor section; a first insulating member and a second insulating member, which face each other by having the circuit body therebetween; a first base and a second base, which face each other by having the circuit body, the first insulating member, and the second insulating member therebetween; a case, in which a first opening covered with the first base, and a second opening covered with the second base are formed; and a distance regulating section, which is provided in a space between the first base and the second base, and which regulates the distance between the first base and the second base by being in contact with both the bases.
(FR) La présente invention vise à améliorer la productivité d'un dispositif à semi-conducteur d'énergie tout en assurant sa fiabilité. La présente invention est caractérisée en ce qu'elle comprend : un corps de circuit comportant un élément semi-conducteur et une section conductrice ; des premier et second éléments isolants disposés en regard l'un de l'autre, le corps de circuit étant interposé entre ces derniers ; des première et seconde bases disposées en regard l'une de l'autre, le corps de circuit et les premier et second éléments isolants étant interposés entre ces dernières ; un boîtier, dans lequel une première ouverture couverte par la première base, et une seconde ouverture couverte par la seconde base sont formées ; et une section de régulation de distance, disposée dans un espace entre les première et seconde bases, et qui régule la distance entre les première et seconde bases en étant en contact avec ces dernières.
(JA) 本発明の目的は、パワー半導体装置の信頼性を確保しながら生産性を高めることである。 本発明は、半導体素子と導体部を含んで構成される回路体と、前記回路体を挟んで互いに対向される第1絶縁部材と第2絶縁部材と、前記回路体と前記第1絶縁部材と前記第2絶縁部材を挟んで互いに対向される第1ベースと第2ベースと、前記第1ベースにより覆われる第1開口部及び前記第2ベースにより覆われる第2開口部が形成されるケースと、前記第1ベースと前記第2ベースとの間の空間に設けられかつ当該双方のベースに接触することにより当該第1ベースと当該第2ベースとの間の距離を規制する距離規制部とを備える事を特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)