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1. (WO2019003681) SOLID-STATE IMAGE CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
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Pub. No.: WO/2019/003681 International Application No.: PCT/JP2018/018886
Publication Date: 03.01.2019 International Filing Date: 16.05.2018
IPC:
H01L 27/146 (2006.01) ,H04N 5/369 (2011.01) ,H04N 9/07 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
9
Details of colour television systems
04
Picture signal generators
07
with one pick-up device only
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
西木戸健樹 NISHIKIDO Kenju; JP
森山卓 MORIYAMA Suguru; JP
Agent:
松尾憲一郎 MATSUO Kenichiro; JP
Priority Data:
2017-12758429.06.2017JP
Title (EN) SOLID-STATE IMAGE CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
(FR) ÉLÉMENT DE CAPTURE D'IMAGE À SEMI-CONDUCTEUR ET DISPOSITIF DE CAPTURE D'IMAGE
(JA) 固体撮像素子および撮像装置
Abstract:
(EN) The purpose of the present invention is to reduce variation in photoelectric conversion performance between pixels (effective pixels and light-blocking pixels) in an image capture element. A solid-state image capture element is provided with: a plurality of pixels which are provided with a color filter transmissive to a predetermined wavelength of light of incident light, a photoelectric conversion portion which is formed on a semiconductor substrate and performs photoelectric conversion in accordance with light that has passed through the color filter, and an insulating layer disposed between the color filter and the semiconductor substrate; a light-blocking pixel which is a pixel disposed in the vicinity of the color filter in the insulating layer and provided with a first light-blocking portion that blocks light that has passed through the color filter of the pixel; and a second light-blocking portion which is disposed in the insulating layer between the plurality of pixels and the light-blocking pixel, and which blocks light that has passed through the color filter of an adjacent pixel.
(FR) Le but de la présente invention est de réduire la variation en performance de conversion photoélectrique entre des pixels (pixels efficaces et pixels de blocage de lumière) dans un élément de capture d'image. Un élément de capture d'image à semi-conducteur comprend : une pluralité de pixels qui sont dotés d'un filtre de couleur transmissif à une longueur d'onde prédéterminée de lumière de lumière incidente, une partie de conversion photoélectrique qui est formée sur un substrat semi-conducteur et qui réalise une conversion photoélectrique en fonction de la lumière qui a traversé le filtre de couleur, et une couche isolante disposée entre le filtre de couleur et le substrat semi-conducteur; un pixel de blocage de lumière qui est un pixel disposé à proximité du filtre de couleur dans la couche isolante et comprenant une première partie de blocage de lumière qui bloque la lumière qui a traversé le filtre de couleur du pixel; et une seconde partie de blocage de lumière qui est disposée dans la couche isolante entre la pluralité de pixels et le pixel de blocage de lumière, et qui bloque la lumière qui a traversé le filtre de couleur d'un pixel adjacent.
(JA) 撮像素子における画素(有効画素と遮光画素)間の光電変換性能ばらつきを低減する。 入射光のうち所定の波長の光を透過させるカラーフィルタと半導体基板に形成されてカラーフィルタを透過した光に応じて光電変換を行う光電変換部とカラーフィルタおよび半導体基板の間に配置される絶縁層とを備える複数の画素と、絶縁層におけるカラーフィルタの近傍に配置されて自身の画素におけるカラーフィルタを透過した光を遮光する第1の遮光部を備える画素である遮光画素と、複数の画素および遮光画素の間の絶縁層に配置されて隣接する画素のカラーフィルタを透過した光を遮光する第2の遮光部とを具備する固体撮像素子。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)