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1. (WO2019003668) SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
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Pub. No.: WO/2019/003668 International Application No.: PCT/JP2018/018498
Publication Date: 03.01.2019 International Filing Date: 14.05.2018
IPC:
H01L 21/205 (2006.01) ,C23C 16/42 (2006.01) ,C30B 25/20 (2006.01) ,C30B 29/36 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
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characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
20
the substrate being of the same materials as the epitaxial layer
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
Applicants:
昭和電工株式会社 SHOWA DENKO K.K. [JP/JP]; 東京都港区芝大門一丁目13番9号 13-9, Shibadaimon 1-chome, Minato-ku, Tokyo 1058518, JP
Inventors:
亀井 宏二 KAMEI Koji; JP
Agent:
及川 周 OIKAWA Shu; JP
荒 則彦 ARA Norihiko; JP
勝俣 智夫 KATSUMATA Tomoo; JP
Priority Data:
2017-12674428.06.2017JP
Title (EN) SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
(FR) TRANCHE ÉPITAXIALE DE SiC ET SON PROCÉDÉ DE FABRICATION
(JA) SiCエピタキシャルウェハ及びその製造方法
Abstract:
(EN) Provided is a SiC epitaxial wafer comprising: a 4H-SiC single crystal substrate of which the main surface is a surface having an off angle with respect to the c-plane, and which has a bevel portion at the circumferential portion thereof; and a SiC epitaxial layer which is formed on the 4H-SiC single crystal substrate and has a thickness of at least 20 μm, wherein the density of interface dislocations extending from the outer circumferential edge of the SiC epitaxial layer is 10 cm-1 or less.
(FR) La présente invention concerne une tranche épitaxiale de SiC comprenant : un substrat monocristallin de 4H-SiC dont la surface principale est une surface ayant un angle de décalage par rapport au plan c, et qui a une partie en biseau au niveau de sa partie circonférentielle; et une couche épitaxiale de SiC qui est formée sur le substrat monocristallin de 4H-SiC et a une épaisseur d'au moins 20 µm, la densité des dislocations d'interface s'étendant depuis le bord circonférentiel externe de la couche épitaxiale de SiC étant inférieure ou égale à 10 cm-1.
(JA) 本発明のSiCエピタキシャルウェハは、c面に対してオフ角を有する面を主面とし、周縁部にベベル部を有する4H-SiC単結晶基板と、前記4H-SiC単結晶基板上に形成された、20μm以上の膜厚のSiCエピタキシャル層と、を備え、前記SiCエピタキシャル層の外周端から延在する界面転位の密度が10本/cm以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)