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1. (WO2019003624) FILM THICKNESS MEASURING METHOD, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, AND NITRIDE SEMICONDUCTOR LAMINATE
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Pub. No.: WO/2019/003624 International Application No.: PCT/JP2018/017144
Publication Date: 03.01.2019 International Filing Date: 27.04.2018
IPC:
H01L 21/66 (2006.01) ,C30B 29/38 (2006.01) ,G01B 11/06 (2006.01) ,H01L 21/20 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11
Measuring arrangements characterised by the use of optical means
02
for measuring length, width, or thickness
06
for measuring thickness
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
株式会社サイオクス SCIOCS COMPANY LIMITED [JP/JP]; 茨城県日立市砂沢町880番地 880, Isagozawa-cho, Hitachi-shi, Ibaraki 3191418, JP
住友化学株式会社 SUMITOMO CHEMICAL COMPANY, LIMITED [JP/JP]; 東京都中央区新川二丁目27番1号 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo 1048260, JP
Inventors:
堀切 文正 HORIKIRI Fumimasa; JP
Agent:
福岡 昌浩 FUKUOKA Masahiro; JP
橘高 英郎 KITTAKA Hideo; JP
Priority Data:
2017-12494327.06.2017JP
Title (EN) FILM THICKNESS MEASURING METHOD, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, AND NITRIDE SEMICONDUCTOR LAMINATE
(FR) PROCÉDÉ DE MESURE D'ÉPAISSEUR DE FILM, PROCÉDÉ DE FABRICATION D'UN STRATIFIÉ SEMI-CONDUCTEUR AU NITRURE ET STRATIFIÉ SEMI-CONDUCTEUR AU NITRURE
(JA) 膜厚測定方法、窒化物半導体積層物の製造方法および窒化物半導体積層物
Abstract:
(EN) A film thickness measuring method for measuring the film thickness of a thin film of a nitride semiconductor laminate made by a thin film undergoing homoepitaxial growth on a substrate comprising crystal of a group III nitride semiconductor, wherein used as the substrate is an item for which there is dependency between the carrier density of that substrate and the absorption coefficient of an infrared region, and the film thickness of the thin film is measured using Fourier-transform infrared spectroscopy or infrared spectroscopic ellipsometry.
(FR) L'invention concerne un procédé de mesure d'épaisseur de film permettant de mesurer l'épaisseur de film d'un film mince d'un stratifié semi-conducteur au nitrure fabriqué par un film mince subissant une croissance homoépitaxiale sur un substrat comprenant un cristal d'un semi-conducteur au nitrure du groupe III, le substrat utilisé étant un élément pour lequel il existe une dépendance entre la densité de support de ce substrat et le coefficient d'absorption d'une région infrarouge, et l'épaisseur de film du film mince étant mesurée à l'aide d'une spectroscopie infrarouge à transformée de Fourier ou d'une ellipsométrie spectroscopique infrarouge.
(JA) III族窒化物半導体の結晶からなる基板上に薄膜がホモエピタキシャル成長されてなる窒化物半導体積層物における薄膜の膜厚を測定する膜厚測定方法であって、基板として、当該基板におけるキャリア濃度と赤外域の吸収係数との間に依存性を有するものを用い、薄膜の膜厚を、フーリエ変換赤外分光法または赤外分光エリプソメトリ法を利用して測定する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)